IS42S16800D-75EBLI ISSI, Integrated Silicon Solution Inc, IS42S16800D-75EBLI Datasheet - Page 35
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IS42S16800D-75EBLI
Manufacturer Part Number
IS42S16800D-75EBLI
Description
IC SDRAM 128MBIT 133MHZ 54BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S16800D-7TL.pdf
(62 pages)
Specifications of IS42S16800D-75EBLI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (8Mx16)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-BGA
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
Mini BGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S16800D-75EBLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S16800D-75EBLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S81600D,
Notes:
1) CAS latency = 2, Burst Length = Full Page
2) X16: A9 and A11 = "Don't Care"
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
07/28/08
READ - FULL-PAGE BURST
DQML, DQMH
COMMAND
A0-A9, A11
X8: A11 = "Don't Care"
BA0, BA1
DQM/
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
ACTIVE
AS
AS
AS
BANK
ROW
ROW
T0
t
t
CKH
CMH
t
t
t
AH
AH
AH
t
IS42S16800D
CK
t
RCD
T1
NOP
t
t
CMS
CL
COLUMN m
BANK
READ
T2
t
CMH
t
CH
(2)
CAS Latency
NOP
T3
t
LZ
t
AC
NOP
T4
D
OUT
t
OH
each row (x4) has
1,024 locations
m
t
AC
NOP
T5
D
OUT
t
OH
m+
t
1
AC
Full page
completion
NOP
T6
D
OUT
t
OH
t
m+
AC
Full-page burst not self-terminating.
Use BURST TERMINATE command.
2
Tn+1
NOP
D
OUT
t
OH
m-
t
1
AC
BURST TERM
Tn+2
D
OUT
t
OH
m
t
AC
Tn+3
NOP
D
OUT
t
DON'T CARE
UNDEFINED
OH
m+
t
HZ
1
Tn+4
NOP
35