KSC838OBU_Q Fairchild Semiconductor
KSC838OBU_Q
Manufacturer Part Number
KSC838OBU_Q
Description
Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Specifications of KSC838OBU_Q
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
35 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
4 V
Collector-emitter Saturation Voltage
30 V
Maximum Dc Collector Current
0.03 A
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
70 at 2 mA at 12 V
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Continuous Collector Current
0.03 A
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 55 C
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