MT47H32M8BP-5E:B Micron Technology Inc, MT47H32M8BP-5E:B Datasheet - Page 22
![IC DDR2 SDRAM 256MBIT 5NS 60FBGA](/photos/7/23/72317/mfg557-60-fbga_sml.jpg)
MT47H32M8BP-5E:B
Manufacturer Part Number
MT47H32M8BP-5E:B
Description
IC DDR2 SDRAM 256MBIT 5NS 60FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H16M16BG-3B_TR.pdf
(128 pages)
Specifications of MT47H32M8BP-5E:B
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
256M (32M x 8)
Speed
5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M8BP-5E:B
Manufacturer:
MICRON
Quantity:
12 388
Company:
Part Number:
MT47H32M8BP-5E:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
MT47H32M8BP-5E:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
- Current page: 22 of 128
- Download datasheet (10Mb)
Table 7: Thermal Impedance
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Die Revision Package Substrate
B
Last shrink
target
1
2
60-ball
84-ball
60-ball
84-ball
Notes:
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
1. Thermal resistance data is based on a number of samples from multiple lots and should
2. This is an estimate; simulated number and actual results could vary.
be viewed as a typical number.
Airflow = 0m/s
θ JA (°C/W)
59.0
37.8
53.6
36.6
65
45
55
40
Airflow = 1m/s
Electrical Specifications – Absolute Ratings
θ JA (°C/W)
22
46.7
32.5
40.0
29.9
48
38
45
35
Micron Technology, Inc. reserves the right to change products or specifications without notice.
256Mb: x4, x8, x16 DDR2 SDRAM
Airflow = 2m/s
θ JA (°C/W)
43.1
30.7
35.2
27.5
45
34
37
30
θ JB (°C/W)
©2003 Micron Technology, Inc. All rights reserved.
25.0
20.5
20.0
19.2
30
27
28
27
θ JC (°C/W)
4.4
5.2
5.0
6.0
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