MMBTA42-T Micro Commercial Components (MCC), MMBTA42-T Datasheet

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MMBTA42-T

Manufacturer Part Number
MMBTA42-T
Description
Transistors Bipolar - BJT 300V
Manufacturer
Micro Commercial Components (MCC)
Datasheet

Specifications of MMBTA42-T

Product Category
Transistors Bipolar - BJT
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
300 V
Collector- Emitter Voltage Vceo Max
300 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.3 A
Gain Bandwidth Product Ft
50 MHz
Dc Collector/base Gain Hfe Min
25 at 1 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
3000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTA42-TP
Manufacturer:
MCC/美微科
Quantity:
20 000
Revision: A
Electrical Characteristics @ 25
Features
THERMAL CHARACTERISTICS
*Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
V
V
V
I
I
h
V
V
f
C
Thermal Resistance, Junction to Ambient
Micro Commercial Components
Total Device Dissipation
CBO
EBO
T
Total Device Dissipation FR–5 Board,
Symbol
FE
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
cb
Alumina Substrate,
Derate above 25°C
RoHS Compliant. See ordering information)
T
Derate above 25°C
Lead Free Finish/RoHS Compliant ("P" Suffix designates
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Capable of 300mWatts of Power Dissipation
Continuous Collector Current : 300mA
Marking:1D
M C C
A
= 25°C
Collector-Emitter Capacitance
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain*
Collector-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Collector Cutoff Current
Emitter Cutoff Current
Base-Emitter Saturation Voltage
Characteristic
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
=1.0mAdc, I
=100µAdc, I
=100µAdc, I
CB
E B
=1.0mAdc, V
=10mAdc, V
=30mAdc, V
=20mAdc, I
=20mAdc, I
=10mAdc, V
CB
=200Vdc, I
=6.0Vdc, I
=20Vdec, I
(2)
T
A
= 25°C
Parameter
B
B
C
B
E
C
CE
CE
CE
=2.0mAdc)
=2.0mAdc)
E
E
CE
=0)
=0)
=0)
=0)
=0, f=1.0MHz)
=0)
=10Vdc)
=10Vdc)
=20Vdc, f=100MHz)
=10Vdc)
www.mccsemi.com
(1)
TM
O
C Unless Otherwise Specified
Symbol
T
R
R
J
  omponents
20736 Marilla Street Chatsworth

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P
P
, T
qJA
qJA
D
D
stg
50
Min
–55 to +150
300
300
25
40
40
6.0
Max
225
556
300
417
1.8
2.4
Max
3.0
----
0.5
0.9
0.1
0.1
1 of 3
mW/°C
mW/°C
Units
°C/W
°C/W
Unit
mW
mW
Vdc
Vdc
pF
MHz
°C
uAdc
uAdc
Vdc
Vdc
Vdc
G
DIM
A
B
C
D
E
F
G
H
K
J
Voltage Transistor
NPN Silicon High
F
K
.0005
.110
.083
.047
.035
.070
.018
.035
.003
.015
MIN
.035
.900
INCHES
MMBTA42
A
E
.037
.950
Suggested Solder
D
.031
.800
SOT-23
.0039
MAX
.120
.104
.055
.041
.081
.024
.044
.007
.020
Pad Layout
DIMENSIONS
.037
.950
H
C
B
MIN
2.80
2.10
1.20
1.78
.013
.085
.89
.45
.89
.37
.079
2.000
J
MM
MAX
3.04
2.64
1.40
1.03
2.05
.100
1.12
.180
B
.60
.51
2011/01/01
C
inches
mm
NOTE
E

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MMBTA42-T Summary of contents

Page 1

... Symbol Max (1) P 225 D 1.8 R 556 qJA P 300 D 2.4 R 417 qJA –55 to +150 J stg MMBTA42 NPN Silicon High Voltage Transistor SOT-23 A Units D Vdc B C Vdc Vdc F E uAdc uAdc DIMENSIONS INCHES DIM MIN MAX A .110 .120 B .083 ...

Page 2

... MMBTA42 Figure 2. Capacitance Figure 4. ”ON” Voltages www.mccsemi.com Revision: A ° ° ° Figure 1. DC Current Gain Micro Commercial Components Figure 3. Current–Gain – Bandwidth ° ° ° ° ° ° ° ° ° TM ° 2011/01/01 ...

Page 3

... MCC's products are not authorized for use as critical components in life support devices or systems without the express written Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below ...

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