BC847BW-7 Diodes Inc., BC847BW-7 Datasheet - Page 2
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BC847BW-7
Manufacturer Part Number
BC847BW-7
Description
Transistors Bipolar - BJT NPN BIPOLAR
Manufacturer
Diodes Inc.
Datasheet
1.BC847CW-7.pdf
(3 pages)
Specifications of BC847BW-7
Product Category
Transistors Bipolar - BJT
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-323
Maximum Power Dissipation
200 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC847BW-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Electrical Characteristics
Collector-Base Breakdown Voltage (Note 6)
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
(Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Voltage (Note 6)
Collector-Cutoff Current (Note 6)
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Notes:
DS30250 Rev. 9 - 2
250
300
200
150
100
50
6. Short duration pulse test used to minimize self-heating effect.
0
0
25
Characteristic
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
A
50
Ambient Temperature
75
Current Gain Group A
100 125
BC846, BC847
@T
(Note 6)
A
= 25°C unless otherwise specified
BC846
BC847
BC848
BC846
BC847
BC848
BC848
150
C
B
175
V
V
V
Symbol
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(SAT)
C
BE(SAT)
BE(ON)
I
I
h
CBO
CBO
NF
200
CBO
f
FE
T
www.diodes.com
2 of 3
Min
110
200
420
580
100
80
50
30
65
45
30
—
—
—
—
—
—
—
6
5
Typ
180
290
520
200
700
900
660
300
3.0
90
0.4
0.3
0.2
—
—
—
—
—
—
—
—
—
—
—
0.1
0
0.1
I
I
C
B
= 20
Fig. 2 Collector Emitter Saturation Voltage
Max
220
450
800
250
600
700
770
5.0
4.5
15
10
—
—
—
—
—
—
—
—
—
I , COLLECTOR CURRENT (mA)
C
T = 150°C
A
1
vs. Collector Current
MHz
Unit
mV
mV
mV
nA
µA
pF
dB
—
V
V
V
T = 25°C
10
A
I
I
I
V
I
I
I
I
V
V
V
V
V
f = 100MHz
V
V
R
f = 1.0kHz, Δf = 200Hz
C
C
E
C
C
C
C
CE
CE
CE
CB
CB
CE
CB
CE
S
= 1μA, I
= 10μA, I
= 10mA, I
= 10mA, I
= 100mA, I
= 10mA, I
= 100mA, I
= 2.0kΩ,
= 5.0V, I
= 5.0V, I
= 5.0V, I
= 30V
= 30V, T
= 5.0V, I
= 10V, f = 1.0MHz
= 5V, I
Test Condition
C
BC846AW - BC848CW
100
C
B
T = -50°C
B
= 0
B
B
A
C
C
C
A
C
= 200µA,
= 0
B
B
= 0
= 0.5mA
= 0.5mA
= 2.0mA
= 2.0mA
= 10mA
= 150°C
= 10mA,
= 5.0mA
= 5.0mA
© Diodes Incorporated
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