IS61LF6436A-8.5TQI ISSI, Integrated Silicon Solution Inc, IS61LF6436A-8.5TQI Datasheet - Page 7

• Manufacturer Part Number: IS61LF6436A-8.5TQI
• Description: IC SRAM 2MBIT 8.5NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LF6436A-8.5TQI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 2M (64K x 36)
• Speed: 8.5ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LF6436A
IS61LF6432A
OPERATING RANGE
DC ELECTRICAL CHARACTERISTICS
Symbol
V
V
V
V
I
I
POWER SUPPLY CHARACTERISTICS
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
08/25/05
LO
LI
OH
Range
Industrial
OL
IH
IL
Symbol
I
I
I
CC
SB
ZZ
Notes:
1. The MODE pin has an internal pullup. This pin may be a No Connect, tied to Vss, or tied to V
2. The MODE pin should be tied to V
1
or
V
DD
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
– 0.2V.
Ambient Temperature
Parameter
AC Operating
Supply Current
Standby Current
CMOS Input
Sleep Mode
–40°C to +85°C
DD
Test Conditions
I
I
I
I
Vss V
Vss V
OE = V
Test Conditions
Device Selected,
OE = V
Cycle Time t
Device Deselected,
V
V
ZZ>V
OH
OH
OL
OL
All Inputs 0.2V or V
f = 0
IN
DD
or Vss. It exhibits ±10 µA maximum leakage current when tied to
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= 1.0 mA (2.5V)
= Max.,
IH
V
IH
SS
3.3V, +10%, –5%
OUT
I
IN
, ZZ V
+ 0.2V or V
V
KC
DD
V
(1)
(Over Operating Range)
V
DDQ
IL
min.
DD
,
(Over Operating Range)
,
DD
DD
– 0.2V
– 0.2V,
Min.
–0.3
2.0
1.7
—
–5
–5
2.5V (I/O)
I
I
I
ND
ND
ND
V
.
.
.
DD
Max.
0.4
0.7
—
5
5
+ 0.3
3.3V, +10%, –5%
3.3V (I/O)
V
DDQ
Max.
150
8.5
75
35
Min.
–0.3
2.4
2.0
–5
—
–5
3.3V (I/O)
DD
.
V
DD
Max.
0.4
0.8
—
5
5
+ 0.3
Unit
mA
mA
mA
2.5V + 5%
2.5V (I/O)
Vss + 0.2V
V
ISSI
DDQ
Unit
µA
µA
V
V
V
V
®
7