BC857C-7 Diodes Inc., BC857C-7 Datasheet - Page 4

• Manufacturer Part Number: BC857C-7
• Description: Transistors Bipolar - BJT PNP BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC857C-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 420 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note 10)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Emitter Cutoff Current
Small Signal Current Gain
(Note 10)
Input Impedance (Note 10)
Output Admittance
(Note 10)
Reverse Voltage Transfer
Ratio (Note 10)
DC Current Gain (Note 10)
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
Base-Emitter Saturation Voltage (Note 10)
Output Capacitance
Transition Frequency
Noise Figure
Notes:
BC856A – BC858C
Document Number: DS112072 Rev. 22 - 2
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Characteristic
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC856A / BC857A / BC858A
BC856B / BC857B / BC858B
BC857C / BC858C
BC857C / BC858C
BC857C / BC858C
BC857C / BC858C
BC857C / BC858C
(@T
A
= +25°C, unless otherwise specified.)
BC856
BC857
BC858
BC856
BC857
BC858
BC856
BC857
BC858
www.diodes.com
Symbol
V
V
BV
BV
V
BV
I
C
I
CE(sat)
BE(sat)
BE(on)
h
CBO
CES
h
NF
h
h
h
f
4 of 7
obo
FE
CBO
CEO
EBO
oe
fe
re
T
ie
-600
Min
125
220
420
100
-80
-50
-30
-65
-45
-30
-5
—
—
—
—
—
—
—
—
—
—
—
1.5x10
2x10
3x10
-250
-650
-700
-850
Typ
200
330
600
180
290
520
200
-75
2.7
4.5
8.7
—
—
—
—
—
18
30
60
—
3
2
-4
-4
-4
-300
-650
-750
-820
Max
250
475
800
-15
-15
-15
-15
10
—
—
—
—
—
—
—
—
—
—
-4
Unit
MHz
mV
mV
mV
µA
nA
kΩ
µS
pF
dB
—
—
—
V
V
V
BC856A-BC858C
I
I
I
V
V
V
V
V
I
f = 1.0kHz
I
I
I
I
I
I
I
V
V
f = 100MHz
V
R
∆f = 200Hz
C
C
E
C
C
C
C
C
C
C
C
CB
CB
CE
CE
CE
CB
CE
CE
S
= -10µA
= -10mA
= -1µA
= -2.0mA, V
= -2.0mA, V
= - 10mA, I
= - 100mA, I
= -2mA, V
= -10mA, V
= -10mA, I
= -100mA, I
= 2kΩ, f = 1kHz
= -30V
= -30V, T
= -80V
= -50V
= -30V
= -10V, f = 1.0MHz
= -5V, I
= -5V, I
Test Condition
© Diodes Incorporated
C
C
CE
B
B
= -10mA,
= -200µA
A
CE
B
CE
CE
= -0.5mA
B
= -0.5mA
= +150°C
= -5V
= -5mA
= -5.0mA
= -5V
= -5V
= -5V
Feb. 2013