BC857BW-7 Diodes Inc., BC857BW-7 Datasheet - Page 3

• Manufacturer Part Number: BC857BW-7
• Description: Transistors Bipolar - BJT PNP BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC857BW-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Typical Electrical Characteristics
BC856AW – BC858CW
Document Number: DS30251 Rev. 9 - 2
1,000
200
150
100
100
250
50
10
0
1
1
0
R
T = 25°C
Fig. 3 Typical DC Current Gain (Group B)
θJA
25
A
= 625
I , COLLECTOR CURRENT (mA)
T , AMBIENT TEMPERATURE (°C)
T = 150°C
C
A
A
Ambient Temperature (Note 5)
50
°C/W
Fig. 1 Power Dissipation vs.
vs. Collector Current
10
T = -50°C
75
A
100 125
100
150
(@T
V
CE
175
= 5V
A
= +25°C, unless otherwise specified.)
1,000
200
www.diodes.com
3 of 5
1,000
100
Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current
10
0.5
0.4
0.3
0.2
0.1
1
0
0.1
Fig. 2 Typical Collector-Emitter Saturation Voltage
V
CE
= 5V
I
I
C
B
= 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
1
T = 150°C
A
vs. Collector Current
10
BC856AW-BC858CW
T = 25°C
A
10
100
T = -50°C
A
© Diodes Incorporated
November 2012
100
1,000