IS61LPS12836A-200B2LI-TR ISSI, Integrated Silicon Solution Inc, IS61LPS12836A-200B2LI-TR Datasheet - Page 13
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IS61LPS12836A-200B2LI-TR
Manufacturer Part Number
IS61LPS12836A-200B2LI-TR
Description
IC SRAM 4MBIT 200MHZ 119BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LPS12836A-200TQLI.pdf
(26 pages)
Specifications of IS61LPS12836A-200B2LI-TR
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4M (128K x 36)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Package / Case
119-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LPS12836A-200B2LI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61(64)LPS12832A
IS61(64)LPS12836A IS61(64)VPS12836A
IS61(64)LPS25618A IS61(64)VPS25618A
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
2. Typical values are measured at V
Integrated Silicon Solution, Inc.
Rev. H
01/07/2010
Symbol Parameter
I
I
I
CC
SB
SBI
V
SS
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
CMOS Input
DD
– 0.2V.
Test Conditions
Device Selected,
OE = V
≥ V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
≥V
All Inputs ≤ 0.2V or
f = 0
DD
DD
IN
DD
DD
≤ V
= Max.,
= Max.,
– 0.2V
DD
– 0.2V,
IL
IH
SS
, f = Max.
, ZZ ≤ V
= 3.3V, T
+ 0.2V or
IL
KC
or ≥ V
IL
min.
,
A
IH
= 25
,
(1)
o
C and not 100% tested.
(Over Operating Range)
Temp. range
DD
Com.
Com.
Com.
Auto.
Auto.
Auto.
typ.
Ind.
Ind.
Ind.
or V
(2)
SS
. It exhibits ±100µA maximum leakage current when tied to ≤
225
250
275
100
120
x18
90
70
75
90
-250
MAX
40
x32/x36
225
250
275
100
120
90
70
75
90
200
210
225
100
120
x18
90
70
75
90
-200
MAX
40
x32/x36
200
210
225
100
120
90
70
75
90
Unit
mA
mA
mA
13