IS42S32800D-75ETL-TR ISSI, Integrated Silicon Solution Inc, IS42S32800D-75ETL-TR Datasheet - Page 7

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IS42S32800D-75ETL-TR

Manufacturer Part Number
IS42S32800D-75ETL-TR
Description
IC SDRAM 256MBIT 133MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet

Specifications of IS42S32800D-75ETL-TR

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
13b
Access Time (max)
5.5ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DQM TRUTH TABLE
IS42S32800D, IS45S32800D
COMMAND TRUTH TABLE
Note: H=V
Note: H=V
Integrated Silicon Solution, Inc. - www.issi.com
Rev. C
12/01/09
Function
Data write / output enable
Data mask / output disable
Upper byte write enable / output enable
Lower byte write enable / output enable
Upper byte write inhibit / output disable
Lower byte write inhibit / output disable
Function
Device deselect (DESL)
No operation (NOP)
Burst stop (BST)
Read
Read with auto precharge
Write
Write with auto precharge
Bank activate (ACT)
Precharge select bank (PRE) H
Precharge all banks (PALL)
CBR Auto-Refresh (REF)
Self-Refresh (SELF)
Mode register set (MRS)
ih
ih
, L=V
, L=V
il
il
x= V
x= V
ih
ih
or V
or V
il
il
, V = Valid Data.
, V = Valid Data.
n – 1
CKE
H
H
H
H
H
H
H
H
H
H
H
H
H
n
×
×
×
×
×
×
×
×
×
×
L
×
CS
H
L
L
L
L
L
L
L
L
L
L
L
L
CKE
n-1
H
H
H
H
H
H
RAS
H
H
H
H
H
H
×
L
L
L
L
L
L
n
×
×
×
×
×
×
CAS
H
H
H
H
H
×
L
L
L
L
L
L
L
WE
H
H
H
H
H
H
×
L
L
L
L
L
L
DQM
U
L
H
L
×
H
×
BA1
V
V
V
V
V
V
×
×
×
×
×
×
L
BA0
L
L
H
×
L
×
H
V
V
V
V
V
×
×
×
×
×
×
L
V
A10
H
H
H
×
×
×
V
×
×
L
L
L
L
A9 - A0
V
V
V
V
V
V
A11
×
×
×
×
×
×
×
7

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