IS42S32800D-6TLI ISSI, Integrated Silicon Solution Inc, IS42S32800D-6TLI Datasheet - Page 24

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IS42S32800D-6TLI

Manufacturer Part Number
IS42S32800D-6TLI
Description
IC SDRAM 256MBIT 166MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S32800D-6TLI

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
86-TSOPII
Organization
8Mx32
Density
256Mb
Address Bus
13b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S32800D-6TLI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S32800D-6TLI
Quantity:
2 220
Company:
Part Number:
IS42S32800D-6TLI
Quantity:
20
IS42S32800D
24
Timing Waveforms
Figure 1.AC Parameters for Write Timing (Burst Length=4,CAS#Latency=2)
ADDR.
BS0,1
RAS#
CAS#
DQM
CKE
CS#
WE#
CLK
DQ
Hi-Z
t
CH
T0
t
t
IS
IS
T1
t
CL
Command
Activate
Bank A
RBx
T2
t
t
IS
IH
t
RCD
t
t
Auto Precharge
CK2
IH
T3 T4 T5 T6 T7
Write with
Command
Bank A
CAx
Ax0 Ax1 Ax2
t
RC
Command
Activate
Bank B
RBx
Begin Auto Precharge
-5 ,
Ax3 Bx0
Auto Precharge
Bank A
Write with
Command
Bank B
CBx
t
DAL
T8
Bx1
, -7 ,
T9
Command
Activate
Bank A
RAy
Bx2
T10
Integrated Silicon Solution, Inc. — www.issi.com
Begin Auto Precharge
t
IS
Bx3
T11
Command
Bank B
Bank A
Write
Ay0 Ay1 Ay2 Ay3
CAy
T12
x
t
T13
IH
T14
T15 T16 T17 T18 T19
t
Precharge
Command
WR
Bank A
t
x
RP
Command
Activate
Bank A
RAz
t
RRD
t
IS
Command
Activate
Bank B
RBy
T20
T21
Rev. 00B
T22
11/21/07

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