IS42S32800D-7B-TR ISSI, Integrated Silicon Solution Inc, IS42S32800D-7B-TR Datasheet - Page 39

• Manufacturer Part Number: IS42S32800D-7B-TR
• Description: IC SDRAM 256MBIT 143MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800D-7B-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S32800D
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00B
11/21/07
Figure 12.2.Random Row Write (Interleaving Banks)
(Burst Length=8,CAS#Latency=2)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ
* t
High
Hi-Z
WR
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
> t
t
RCD
WR
t
CK2
Command
Bank A
Write
DAx0 DAx1 DAx2 DAx3 DAx4 DAx5 DAx6 DAx7 DBx0 DBx1
CAx
(min.)
Command
Activate
Bank B
RBx
RBx
Command
Bank B
t
WR*
CBx
Write
Precharge
Command
Bank A
t
DBx2 DBx3 DBx4 DBx5 DBx6
RP
Command
Activate
Bank A
RAy
RAy
DBx7
Command
Bank A
t
Write
DAy0 DAy1 DAy2
WR*
CAy
Precharge
Command
Bank B
DAy3
DAy4
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