MT48H16M32LFCM-6 IT:B TR Micron Technology Inc, MT48H16M32LFCM-6 IT:B TR Datasheet - Page 81

• Manufacturer Part Number: MT48H16M32LFCM-6 IT:B TR
• Description: IC SDRAM 512MBIT 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H16M32LFCM-6 IT:B TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 105mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Deep Power-Down
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Deep power-down mode is a maximum power-saving feature achieved by shutting off
the power to the entire device memory array. Data on the memory array will not be re-
tained after deep power-down mode is executed. Deep power-down mode is entered by
having all banks idle, with CS# and WE# held LOW with RAS# and CAS# HIGH at the
rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep power-
down.
To exit deep power-down mode, CKE must be asserted HIGH. Upon exiting deep power-
down mode, a full initialization sequence is required.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2007 Micron Technology, Inc. All rights reserved.
Deep Power-Down