IS42S32800B-7BLI ISSI, Integrated Silicon Solution Inc, IS42S32800B-7BLI Datasheet - Page 45
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IS42S32800B-7BLI
Manufacturer Part Number
IS42S32800B-7BLI
Description
IC SDRAM 256MBIT 143MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7BLI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-BGA
Organization
8Mx32
Density
256Mb
Address Bus
14b
Access Time (max)
5.5ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
BGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32800B-7BLI
Manufacturer:
ISSI
Quantity:
1 000
Company:
Part Number:
IS42S32800B-7BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32800B-7BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32800B
Integrated Silicon Solution, Inc.
Rev. F
07/21/09
Figure 15.2.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency=2)
A0-A9
BS0,1
RAS#
CAS#
DQM
WE#
CKE
CLK
CS#
A10
DQ
Hi-Z
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Command
Activate
Bank A
RAx
RAx
t
CK2
t
RCD
Command
Bank A
DAx0 DAx1 DAx2 DAx3
Write
CAx
t
RRD
Command
Activate
Bank B
RBw
RBw
Command
Bank B
Write
DBw0 DBw1
CBw
Command
Bank B
Write
DBx0 DBx1
CBx
Command
Bank B
DBy0 DBy1
Write
CBy
Command
Bank A
DAy0
Write
CAy
DAy1
Command
Bank B
DBz0 DBz1 DBz2 DBz3
Write
CBz
Precharge
Command
Bank A
t
RP
t
WR
Precharge
Command
Bank B
t
RP
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