MT48H16M32LFCM-6 L IT:B Micron Technology Inc, MT48H16M32LFCM-6 L IT:B Datasheet - Page 48
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MT48H16M32LFCM-6 L IT:B
Manufacturer Part Number
MT48H16M32LFCM-6 L IT:B
Description
IC SDRAM 512MBIT 166MHZ 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT48H32M16LFBF-75B_TR.pdf
(86 pages)
Specifications of MT48H16M32LFCM-6 L IT:B
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
512M (16M x 32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 17: Consecutive READ Bursts
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Note:
Command
Command
Address
Address
1. Each READ command can be issued to any bank. DQM is LOW.
CLK
CLK
DQ
DQ
T0
T0
Bank,
READ
READ
Col n
Bank,
Col n
CL = 2
CL = 3
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T1
T1
NOP
NOP
48
T2
T2
NOP
NOP
D
OUT
n
T3
T3
NOP
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
D
n + 1
OUT
OUT
READ
T4
READ
T4
Bank,
Bank,
Col b
Col b
X = 1 cycle
D
n + 2
D
Transitioning data
OUT
OUT
X = 2 cycles
T5
T5
NOP
NOP
D
D
n + 3
OUT
OUT
© 2007 Micron Technology, Inc. All rights reserved.
T6
T6
NOP
NOP
READ Operation
D
D
OUT
OUT
b
Don’t Care
T7
NOP
D
OUT
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