IS61VPS25636A-200TQLI-TR ISSI, Integrated Silicon Solution Inc, IS61VPS25636A-200TQLI-TR Datasheet - Page 4

• Manufacturer Part Number: IS61VPS25636A-200TQLI-TR
• Description: IC SRAM 9MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61VPS25636A-200TQLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
119 BGA PACKAGE PIN CONFIGURATION-
Note: * A
4
PIN DESCRIPTIONS
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2
BWx (x=a-d) Synchronous Byte Write Controls
BWE
A
B
C
D
E
F
g
H
J
K
L
M
N
P
R
T
U
0
and A
V
V
V
V
V
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
NC
NC
NC
NC
DDQ
DDQ
DDQ
DDQ
DDQ
1
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Byte Write Enable
DQPd
DQPc
TMS
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
CE2
V
NC
A
A
A
2
DD
MODE
BWd
BWc
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
TDI
NC
A
A
A
A
3
ADSC
ADSP
BWE
ADV
TCK
CLK
V
GW
V
V
NC
CE
OE
NC
A
A
A
4
DD
DD
DD
1
0
*
*
256k
BWb
BWa
TDO
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
A
A
A
A
5
x
TMS, TDI
36 (TOP VIEW)
Symbol
OE
ZZ
MODE
TCK, TDO
NC
DQa-DQd
DQPa-Pd
V
V
Vss
dd
ddq
DQPb
DQPa
DQb
DQb
DQb
DQb
DQa
DQa
DQa
DQa
V
NC
NC
A
A
A
A
6
DD
V
V
V
V
V
DQb
DQb
DQb
DQb
DQa
DQa
DQa
DQa
NC
NC
NC
ZZ
Pin Name
Output Enable
Power Sleep Mode
Burst Sequence Selection
JTAG Pins
No Connect
Data Inputs/Outputs
Output Power Supply
Power Supply
Output Power Supply
Ground
DDQ
DDQ
DDQ
DDQ
DDQ
7
Integrated Silicon Solution, Inc.
01/19/10
Rev. K