IS61WV102416BLL-10TLI-TR ISSI, Integrated Silicon Solution Inc, IS61WV102416BLL-10TLI-TR Datasheet - Page 4

• Manufacturer Part Number: IS61WV102416BLL-10TLI-TR
• Description: IC SRAM 16MBIT 10NS 48TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61WV102416BLL-10TLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 16M (1M x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
TRUTH TABLE
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
4
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
Mode
Not Selected
Output Disabled
Read
Write
Symbol
C
C
Symbol
V
V
T
P
to the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
STG
IN
TERM
DD
T
I/O
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
DD
Parameter
Input Capacitance
Input/Output Capacitance
Relates to GND
A
(1,2)
= 25°C, f = 1 MHz, V
WE
WE
WE
WE
WE
X
H
X
H
H
H
L
L
L
CE
CE
CE
CE
CE
H
L
L
L
L
L
L
L
L
DD
OE
OE
OE
OE
OE
= 3.3V.
X
H
X
X
X
X
L
L
L
(1)
Integrated Silicon Solution, Inc. — www.issi.com —
LB
LB
LB
LB
LB
X
X
H
H
H
L
L
L
L
Conditions
V
V
OUT
IN
= 0V
UB
UB
UB
UB
UB
= 0V
X
X
H
H
H
L
L
L
L
–0.5 to V
–65 to +150
–0.3 to 4.0
Value
1.0
DD
+ 0.5
I/O0-I/O7
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
Max.
IN
IN
6
8
Unit
°C
W
V
V
I/O PIN
I/O8-I/O15
Unit
pF
pF
High-Z
High-Z
High-Z
High-Z
High-Z
D
D
D
D
OUT
OUT
IN
IN
V
DD
1-800-379-4774
I
SB
Current
1
I
I
I
CC
CC
CC
, I
SB
2
06/05/09
Rev. E