IS42S32160A-75B-TR ISSI, Integrated Silicon Solution Inc, IS42S32160A-75B-TR Datasheet - Page 52

• Manufacturer Part Number: IS42S32160A-75B-TR
• Description: IC SDRAM 512MBIT 133MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32160A-75B-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 14b
• Access Time (max): 6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 185mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S32160A
52
Figure 19.2.Full Page Write Cycle (Burst Length=Full Page,CAS#Latency=2)
BS0,1
CAS#
ADD
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ
Hi-Z
High
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
CK2
Command
Bank A
Write
CAx
DAx
DAx+1 DAx+2 DAx+3 DAx-1
Command
Activate
Bank B
RBx
RBx
The burst counter wraps
from the highest order
page address back to zero
during this time interval
DAx
DAx+1 DBx
Full Page burst operation does
not terminate when the burst
length is satisfied; the burst counter
increments and continues bursting
beginning with the starting address.
Command
Bank B
CBx
Write
DBx+1 DBx+2 DBx+3 DBx+4 DBx+5 DBx+6
Data is ignored
5
Integrated Silicon Solution, Inc.
Burst Stop
Command
Precharge
Command
Bank B
Command
Activate
Bank B
RBy
RBy
Rev. 00E
07/21/09