IS42S32160B-75BL ISSI, Integrated Silicon Solution Inc, IS42S32160B-75BL Datasheet - Page 24

• Manufacturer Part Number: IS42S32160B-75BL
• Description: IC SDRAM 512MBIT 133MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32160B-75BL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 125mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32160B
24
I
Timing Waveforms
AC Parameters for Write Timing (Burst Length=4,CAS#Latency=2)
ADDR.
BS0,1
RAS#
CAS#
DQM
CKE
CS#
WE#
CLK
DQ
Hi-Z
t
CH
T0
t
t
IS
IS
T1
t
CL
Command
Activate
Bank A
RBx
T2
t
t
IS
IH
t
RCD
t
t
Auto Precharge
CK2
IH
T3 T4 T5 T6 T7
Write with
Command
Bank A
CAx
Ax0 Ax1 Ax2
t
RC
Command
Activate
Bank B
RBx
Begin Auto Precharge
-5 ,
Ax3 Bx0
Auto Precharge
Write with
Command
Bank A
Bank B
CBx
t
DAL
T8
Bx1
, -7 ,
T9
Command
Activate
Bank A
RAy
Bx2
T10
Begin Auto Precharge
t
IS
Bx3
T11
Command
Bank B
Integrated Silicon Solution, Inc. — www.issi.com
Bank A
Write
Ay0 Ay1 Ay2 Ay3
CAy
T12
x
t
T13
IH
T14
T15 T16 T17 T18 T19
t
Precharge
Command
WR
Bank A
x
t
RP
Command
Activate
Bank A
RAz
t
RRD
t
IS
Command
Activate
Bank B
RBy
T20
I
T21
T22
Rev. 00C
03/27/08
®