IS61LF25636A-7.5TQLI ISSI, Integrated Silicon Solution Inc, IS61LF25636A-7.5TQLI Datasheet - Page 12
IS61LF25636A-7.5TQLI
Manufacturer Part Number
IS61LF25636A-7.5TQLI
Description
IC SRAM 9MBIT 7.5NS 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LF25636A-7.5TQLI-TR.pdf
(32 pages)
Specifications of IS61LF25636A-7.5TQLI
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Density
9Mb
Access Time (max)
7.5ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
117MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
18b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Number Of Ports
4
Supply Current
185mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.465V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
256K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
706-1093
IS61LF25636A-7.5TQLI
IS61LF25636A-7.5TQLI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LF25636A-7.5TQLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS61LF25636A-7.5TQLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
OPERATING RANGE (IS61VFxxxxx)
Range
Commercial
Industrial
IS61/64LF25636A IS61LF51218A IS61VF25636A IS61VF51218A
OPERATING RANGE (IS64LFxxxxx)
Range
Automotive
DC ELECTRICAL CHARACTERISTICS
Symbol
V
V
V
V
I
POWER SUPPLY CHARACTERISTICS
Symbol Parameter
I
I
Note:
1. MODE pin has an internal pullup and should be tied to V
12
OPERATING RANGE (IS61LFxxxxx)
Range
Commercial
Industrial
I
cc
sb
sbI
I
lI
lO
Oh
Ol
Ih
Il
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
cMOs Input
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Ambient Temperature
Ambient Temperature
Ambient Temperature
-40°C to +125°C
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
f = 0
All Inputs ≤ 0.2V or ≥ V
dd
dd
IN
≤ V
= Max.,
= Max.,
Il
Ih
ss
, f = Max.
Test Conditions
I
I
I
I
V
V
, ZZ ≤ V
Oh
Oh
Ol
Ol
ss
ss
+ 0.2V or ≥V
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
≤ V
≤ V
Il
kc
or ≥ V
IN
OuT
Il
min.
,
≤ V
dd
(Over Operating Range)
≤ V
or V
Ih
dd
,
dd
ddq
(1)
dd
(1)
ss
– 0.2V
– 0.2V, A
. It exhibits ±100 µA maximum leakage current when tied to ≤ V
, OE = V
(Over Operating Range)
2.5V ± 5%
2.5V ± 5%
3.3V ± 5%
Temp. range
3.3V ± 5%
3.3V ± 5%
V
V
V
DD
DD
Ih
DD
Com.
Com.
A
Com.
Auto.
uTO
uTO
Ind.
Ind.
Ind.
.
.
Min.
–0.3
2.4
2.0
—
–5
–5
MAx
6.5
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
185
190
140
150
3.3V
x18
2.5V ± 5%
80
85
2.5V ± 5%
V
V
V
V
dd
Max.
DDq
DDq
0.4
0.8
DDq
—
185
190
140
150
5
5
x36
+ 0.3
80
85
Integrated Silicon Solution, Inc.
Min.
–0.3
2.0
1.7
–5
–5
—
2.5V
ss
175
185
225
140
150
150
130
x18
80
85
+ 0.2V or ≥ V
V
7.5
MAx
dd
Max.
0.4
0.7
—
5
5
+ 0.3
175
185
225
140
150
150
130
x36
80
85
dd
– 0.2V.
07/22/2010
Unit
mA
mA
mA
Unit
µA
µA
Rev. H
V
V
V
V