IS42S32160B-75TLI ISSI, Integrated Silicon Solution Inc, IS42S32160B-75TLI Datasheet - Page 14

• Manufacturer Part Number: IS42S32160B-75TLI
• Description: IC SDRAM 512MBIT 133MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32160B-75TLI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 86-TSOPII
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 125mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32160B
14
· Interrupted by a WRITE (with or without auto precharge): A WRITE to bank m will interrupt a WRITE on bank
WRITE with Auto Precharge
· Interrupted by a READ (with or without auto precharge): A READ to bank m will interrupt a WRITE on bank n
n when registered. The PRECHARGE to bank n will begin after t WR is met, where t WR begins when the WRITE
to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE
to bank m.
when registered, with the data-out ap- pearing CAS latency later. The PRECHARGE to bank n will begin after
t WR is met, where t WR begins when the READ to bank m is registered. The last valid WRITE to bank n will
be data-in registered one clock prior to the READ to bank m.
Internal
States
Internal
States
NOTE: 1. DQM is LOW.
NOTE: 1. DQM is LOW.
WRITE With Auto Precharge Interrupted by a WRITE
WRITE With Auto Precharge Interrupted by a READ
COMMAND
ADDRESS
COMMAND
BANK m
BANK n
ADDRESS
BANK m
BANK n
CLK
DQ
Page Active
NOP
T0
Page Active
T0
NOP
WRITE - AP
BANK n,
Page Active
BANK n
COL a
T1
D
WRITE - AP
a
IN
BANK n,
WRITE with Burst of 4
Page Active
BANK n
COL a
T1
D
a
IN
WRITE with Burst of 4
T2
a + 1
D
NOP
IN
T2
a + 1
D
NOP
IN
a + 2
T3
D
IN
BANK m,
READ - AP
T3
COL d
BANK m
Interrupt Burst, Write-Back
t
WR - BANK n
CAS Latency = 3 (BANK m)
READ with Burst of 4
BANK m,
WRITE - AP
COL d
BANK m
T4
D
Interrupt Burst, Write-Back
t
d
IN
WR - BANK n
T4
WRITE with Burst of 4
Integrated Silicon Solution, Inc. — www.issi.com
NOP
T5
d + 1
NOP
D
T5
IN
NOP
Precharge
t
RP - BANK n
T6
d + 2
NOP
Precharge
D
t RP - BANK n
IN
T6
D
NOP
OUT
d
DON’T CARE
DON’T CARE
T7
d + 3
NOP
D
t WR - BANK m
IN
Write-Back
T7
D
d + 1
NOP
t RP - BANK m
OUT
I
®
Rev. 00C
03/27/08