IS42S32160C-6BL-TR ISSI, Integrated Silicon Solution Inc, IS42S32160C-6BL-TR Datasheet - Page 24

• Manufacturer Part Number: IS42S32160C-6BL-TR
• Description: IC SDRAM 512MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32160C-6BL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 16Mx32
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: WBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 300mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32160C
24
AC Parameters for Read Timing (Burst Length=2, CAS# Latency=2)
BS0,1
ADD
CAS#
RAS#
DQM
CKE
CS#
WE#
CLK
A10
DQ
Hi-Z
t
CH
t
T0
IS
t
CL
t
IS
T1
Command
Activate
Bank A
RAx
RAx
t
IS
t
T2
CK2
t
t
RCD
t
IH
IH
T3
Command
Bank A
t
Read
RRD
CAx
T4
t
t
LZ
AC2
T5
Command
Activate
Bank B
RBx
RBx
Ax0
t
T6
AC2
t
OH
t
RAS
Ax1
Auto Precharge
t
T7
HZ
Command
t
Read with
RC
Bank B
CBx
Begin AutoPrecharge
T8
Bank B
Integrated Silicon Solution, Inc.
T9
Precharge
Command
Bank A
Bx0
T10
t
RP
Bx1
t
T11
t
IH
HZ
Command
Activate
Bank A
RAy
RAy
T12
T13
Rev. B
01/22/09