IS61NVP51236-200TQLI-TR ISSI, Integrated Silicon Solution Inc, IS61NVP51236-200TQLI-TR Datasheet - Page 13

• Manufacturer Part Number: IS61NVP51236-200TQLI-TR
• Description: IC SRAM 18MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NVP51236-200TQLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP25672/IS61NVP25672
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418
CAPACITANCE
Symbol
c
c
3.3V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
3.3V I/O OUTPUT LOAD EQUIVALENT
Integrated Silicon Solution, Inc. — www.issi.com
Rev. M
01/06/2011
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
In
ouT
OUTPUT
Parameter
Input Capacitance
Input/Output Capacitance
(1,2)
A
= 25°c, f = 1 MHz, V
Zo= 50Ω
Figure 1
See Figures 1 and 2
0V to 3.0V
dd
1.5 ns
1.5V
1.5V
Unit
= 3.3V.
50Ω
Conditions
V
V
ouT
In
= 0V
= 0V
OUTPUT
Max.
+3.3V
6
8
351 Ω
Figure 2
Unit
pF
pF
317 Ω
5 pF
Including
jig and
scope
13