IS42S32160C-6BLI ISSI, Integrated Silicon Solution Inc, IS42S32160C-6BLI Datasheet - Page 20
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IS42S32160C-6BLI
Manufacturer Part Number
IS42S32160C-6BLI
Description
IC SDRAM 512MBIT 166MHZ 90BGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S32160C-6BI.pdf
(60 pages)
Specifications of IS42S32160C-6BLI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
512M (16M x 32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-BGA
Organization
16Mx32
Density
512Mb
Address Bus
15b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
WBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
300mA
Pin Count
90
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS42S32160C-6BLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS42S32160C-6BLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS42S32160C
20
D.C. ELECTRICAL CHARACTERISTICS (RECOMMENDED OPERATING CONDITIONS)
Parameter
Operating Current
t
Precharge Standby Current in power down mode
Precharge Standby Current in power down mode
Precharge Standby Current in non-power down mode
Precharge Standby Current in non-power down mode
Active Standby Current in power down mode
Active Standby Current in power down mode
Active Standby Current in non-power down mode
Active Standby Current in non-power down mode
Operating Current (Burst mode)
t
Refresh Current
Self Refresh Current
signal one transition per one cycle
RC
CK
t
CK
t
CKE V
CKE
CKE
CKE& CLK
CKE V
CKE
t
CKE
V
V
CK
RC
I
=t
≥
I
OL
IL
OH
OL
=
t
CK
≥
= 15ns, CKE
RC
∞
≤
≤
≥
≥
≥
(min),
t
RC
(min), Outputs Open, Input
, CKE
V
0.2V
V
V
IL
(min)
IH
IH
IH
IH
(max), t
(0V
Description/ Test Condition
(min), CS#
(min), CLK
(min), CS#
(min), CLK
Outputs Open, Multi-bank interleave
≤
≤
V
≤
V
IL
V
IL
(max), t
≤
CK
IN
(max)
V
LVTTL Output "H" Level Voltage
LVTTL Output "L" Level Voltage
≤
(0V
= 15ns
IL
≥
≥
(max)
≤
≤
V
DD
V
V
V
V
Output Leakage Current
≤
CK
Input Leakage Current
IH
IL
IH
IL
V
, All other pins not under test = 0V )
(max), t
(max), t
(min), t
(min), t
=
OUT
( I
( I
∞
Description
OUT
OUT
≤
CK
CK
V
CK
CK
= -2mA )
= 2mA )
DD
= 15ns
= 15ns
=
=
, DQ disable )
∞
∞
1 bank
operation
Symbol
I
I
I
I
I
I
I
I
DD2PS
DD3PS
DD3NS
DD2NS
I
DD3N
I
I
I
DD2P
DD2N
DD3P
DD1
DD4
DD5
DD6
300
360
- 5
- 5
-6
Min.
300
2.4
4
40
6
6
80
50
4
60
6
1
Max.
Integrated Silicon Solution, Inc.
Max.
+ 5
+ 5
270
260
320
0.4
-75
4
60
4
40
6
6
80
50
6
µ A
Unit
µA
Unit
mA
V
V
Note
Note
3, 4
3
3
Rev. B
01/22/09