IS42S32160A-75BI ISSI, Integrated Silicon Solution Inc, IS42S32160A-75BI Datasheet - Page 20

• Manufacturer Part Number: IS42S32160A-75BI
• Description: IC SDRAM 512MBIT 133MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S32160A-75BI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S32160A
20
D.C. Electrical Characteristics (Recommended Operating Conditions)
Parameter
Operating Current
t
signal one transition per one cycle
Precharge Standby Current in power down mode
Precharge Standby Current in power down mode
Active Standby Current in power down mode
Active Standby Current in power down mode
Active Standby Current in non-power down mode
Active Standby Current in non-power down mode
Operating Current (Burst mode)
t
Refresh Current
Self Refresh Current
RC
CK
t
t
CK
C KE
CKE& CLK
CKE V
CKE
t
C KE
V
V
CK
RC
I
=t
≥
I
OL
IL
OH
OL
=
t
CK
≥
= 15ns, CKE
RC
∞
≥
(min),
t
(min), Outputs Open, Input
≤
RC
≤
, CKE
V
V
0.2V
(min)
IH
IH
IL
(0V
(min), CS#
(min), CLK
Description/Test condition
(max), t
Outputs Open, Multi-bank interleave
≤
≤
V
≤
V
IL
V
IL
(max), t
≤
IN
(max)
CK
V
(0V
LVTTL Output "H" Level Voltage
LVTTL Output "L" Level Voltage
≤
IL
= 15ns
≥
≤
(max)
V
DD
V
V
Output Leakage Current
≤
CK
Input Leakage Current
IH
IL
V
, All other pins not under test = 0V )
(max), t
(min), t
=
OUT
( I
( I
∞
Description
OUT
OUT
≤
V
CK
CK
= -2mA )
= 2mA )
DD
= 15ns
=
, DQ disable )
∞
1 bank
operation
Symbol
I
I
I
I
I
I
CC3NS
CC2PS
CC3PS
I
I
I
I
CC2P
CC3P
CC3N
CC1
CC4
CC5
CC6
- 5
Min.
- 5
2.4
1
Integrated Silicon Solution, Inc.
-75
230
Max.
185
2.4
335
2.4
2.4
80
80
2.4
4
Max.
+ 5
+ 5
0.4
Unit
Unit
mA
V
V
A
A
Rev. 00E
07/21/09
Note
Note
3, 4
3
3
3
3