MT47H64M16HR-3 IT:G TR Micron Technology Inc, MT47H64M16HR-3 IT:G TR Datasheet - Page 58
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MT47H64M16HR-3 IT:G TR
Manufacturer Part Number
MT47H64M16HR-3 IT:G TR
Description
IC DDR2 SDRAM 1GBIT 3NS 84FBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT47H256M4HQ-5EE_TR.pdf
(131 pages)
Specifications of MT47H64M16HR-3 IT:G TR
Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
1G (64M x 16)
Speed
3ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
84-FBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 23: Nominal Slew Rate for
Figure 24: Tangent Line for
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. T 02/10 EN
V
V
V
V
V
V
V
V
Setup slew rate
falling signal
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
IH(AC)min
IH(DC)min
IL(DC)max
IL(AC)max
V
REF(DC)
REF(DC)
V
V
CK#
DDQ
CK#
DDQ
V
CK
V
t
CK
SS
IS
SS
Nominal
V
V
line
REF
REF
region
t
region
IS
=
to AC
to AC
ΔTF
V
ΔTF
REF(DC)
Tangent
- V
ΔTF
line
t IS
t IS
IL(AC)max
Setup slew rate
rising signal
Nominal
slew rate
Nominal
t IH
line
t IH
58
=
Setup slew rate
rising signal
Tangent line (V
ΔTR
Micron Technology, Inc. reserves the right to change products or specifications without notice.
ΔTR
t IS
t IS
1Gb: x4, x8, x16 DDR2 SDRAM
Nominal
slew rate
=
Tangent
IH[AC]min
ΔTR
V
V
line
REF
V
region
IH(AC)min
t IH
REF
t IH
region
to AC
Input Slew Rate Derating
to AC
- V
ΔTR
REF[DC]
- V
REF(DC)
)
© 2004 Micron Technology, Inc. All rights reserved.
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