IS61NLF51236-7.5B3-TR ISSI, Integrated Silicon Solution Inc, IS61NLF51236-7.5B3-TR Datasheet - Page 12

• Manufacturer Part Number: IS61NLF51236-7.5B3-TR
• Description: IC SRAM 18MBIT 117MHZ 165FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLF51236-7.5B3-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 117MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61NLF25672/IS61NVF25672
IS61NLF51236/IS61NVF51236
IS61NLF102418/IS61NVF102418
OPERATING RANGE (IS61NLFx)
OPERATING RANGE (IS61NVFx)
DC ELECTRICAL CHARACTERISTICS
Note:
1. Overshoot: V
2. MODE pin has an internal pullup and should be tied to V
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
12
Symbol Parameter
I
I
I
I
CC
SB
SBI
SB
Symbol
V
V
V
V
I
I
LO
LI
Range
Commercial
Industrial
Range
Commercial
Industrial
≤ V
≤ V
OH
OL
IH
IL
2
(1)
(1)
SS
SS
+ 0.2V or ≥ V
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
CMOS Input
Sleep Mode
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
IH
(AC) < V
DD
DD
Ambient Temperature
Ambient Temperature
– 0.2V.
– 0.2V.
DD
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
0°C to +70°C
+ 2.0V (Pulse width less than t
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
V
All Inputs ≤ V
ZZ ≤ V
V
V
ZZ > V
Device Deselected,
Device Deselected,
All Inputs ≤ 0.2V or ≥ V
f = 0
DD
DD
IN
≤ V
= Max.,
= Max.,
IH
IH
IL
SS
Test Conditions
I
I
I
I
V
V
, f = Max.
OH
OH
OL
OL
, ZZ ≤ V
SS
SS
+ 0.2V or ≥ V
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
≤ V
≤ V
IL
KC
IN
OUT
or ≥ V
min.
IL
≤ V
(Over Operating Range)
,
≤ V
DD
IH
DDQ
(2)
,
Integrated Silicon Solution, Inc. — www.issi.com —
DD
DD
(1)
, OE = V
– 0.2V,
– 0.2V
(Over Operating Range)
2.5V ± 5%
3.3V ± 5%
3.3V ± 5%
2.5V ± 5%
Temp. range x18
KC
DD
DD
Com.
Com.
Com.
V
V
C
Ind.
Ind.
Ind.
Ind.
/2). Undershoot: V
IH
OM
DD
DD
or V
or V
.
SS
SS
. It exhibits ±100 µA maximum leakage current when tied to
. It exhibits ±100 µA maximum leakage current when tied to
450
500
150
150
110
125
60
75
Min.
–0.3
2.4
2.0
—
–5
–5
3.3V / 2.5V ± 5%
3.3V / 2.5V ± 5%
MAX
450
500
150
150
110
125
6.5
3.3V
x36
60
75
2.5V ± 5%
2.5V ± 5%
IL
V
(AC) > -2V (Pulse width less than t
V
V
DD
Max.
DDQ
DDQ
0.4
0.8
—
5
5
+ 0.3
600
150
150
110
125
650
x72
60
75
425
475
150
150
110
125
x18
60
75
Min.
–0.3
2.0
1.7
—
–5
–5
2.5V
MAX
7.5
425
475
150
150
110
125
x36
60
75
V
DD
Max.
0.4
0.7
—
5
5
+ 0.3
1-800-379-4774
550
600
150
150
110
125
x72
KC
60
75
/2).
12/08/08
Unit
µA
µA
Rev. C
Unit
V
V
V
V
mA
mA
mA
mA