MT46H64M16LFCK-6:A TR Micron Technology Inc, MT46H64M16LFCK-6:A TR Datasheet - Page 84
![IC DDR SDRAM 1GBIT 60VFBGA](/photos/7/23/72339/60vfbga-package_sml.jpg)
MT46H64M16LFCK-6:A TR
Manufacturer Part Number
MT46H64M16LFCK-6:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H64M16LFCK-5A_TR.pdf
(95 pages)
Specifications of MT46H64M16LFCK-6:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1336-2
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Figure 46: Bank Write – With Auto Precharge
Command
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
1
t
t
IS
IS
NOP
T0
t
4
t
IH
IH
Notes:
t
t
IS
ACTIVE
IS
Bank x
Row
Row
T1
t
IH
t
IH
7. Refer to Figure 29 (page 65) and Figure 30 (page 66) for DQS and DQ timing details.
8. D
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. D
t
CK
these times.
t
OUT
IN
t
RCD
RAS
n = data-out from column n.
NOP
n = data out from column n.
T2
4
t
CH
t
CL
t
t
WRITE
WPRES
Bank x
IS
Col n
T3
Note 3
t
t
IH
DQSS (NOM)
2
84
t
DS
NOP
D
T4
IN
t
WPRE
4
t
1Gb: x16, x32 Mobile LPDDR SDRAM
DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP
T5
t
4
DQSH
T5n
t
WPST
NOP
T6
4
Don’t Care
©2007 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
WR
NOP
T7
4
Transitioning Data
NOP
T8
4
t
RP
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