MT46H32M32LFCM-6 IT:A TR Micron Technology Inc, MT46H32M32LFCM-6 IT:A TR Datasheet - Page 93

• Manufacturer Part Number: MT46H32M32LFCM-6 IT:A TR
• Description: IC DDR SDRAM 1GBIT 90VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H32M32LFCM-6 IT:A TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 1G (32M x 32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1333-2

Revision History
Rev. K – 07/09
Rev. J – 06/09
Rev. I – 03/09
Rev. H – 02/09
Rev. G – 06/08
Rev. F – 04/08
Rev. F – 04/08
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
• Changed
• Modified I
• Added a note to the
• Added a second paragraph to SELF REFRESH (page 38).
• Added
• Removed "60-Ball VFGBA" and "90-Ball VFGBA" columns from Table 3 (page 13).
• Updated step 1 and added Figure 16 (page 47) in Initialization (page 45).
• Updated Status Read Register (page 54).
• Deleted 80Ω from Output Drive Strength (page 53)
• Tightened tRFC to 110ns from 125ns in Table 10, "Electrical Characteristics and Rec-
• Updated IDD specifications
• Updated IDD2N and IDD2NS specifications for -75 and -6 speed grade options in Ta-
• Updated 85°C standard specifications in Table 9, “Idd6 Specifications and Condi-
• Added “L” low-power option
• Added burst length of 16 and note reference to “Features”
• Updated values in Table 6, “Capacitance (x16, x32)”
• Added -5 and -54 speed grades to the following:
ommended AC Operating Conditions"
ble 7, “Idd Specifications and Conditions (x16)” and Table 8, “Idd Specifications and
Conditions (x32)”
tions" for full, half, and quarter-array PASR operation
– Figure 1: “1Gb Mobile DDR Part Numbering”
– Table 9, “Idd6 Specifications and Conditions”
– Removed 70°C and 15°C values from Table 9, “Idd6 Specifications and Conditions”
– Table 7, “Idd Specifications and Conditions (x16)”
– Table 8, “Idd Specifications and Conditions (x32)”
as they are redundant and provided in Figure 8: “Typical Self Refresh Current vs.
Temperature”
t
CKE line to Figure 49 (page 88).
t
RC min value for -75 from 75ns to 67.5ns in Table 10 (page 24).
DD8
description for Table 7 (page 20) and Table 8 (page 21).
t
CKE symbol in Table 10 (page 24).
93
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Revision History