MT46H32M32LFCM-6 L IT:A Micron Technology Inc, MT46H32M32LFCM-6 L IT:A Datasheet - Page 42

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MT46H32M32LFCM-6 L IT:A

Manufacturer Part Number
MT46H32M32LFCM-6 L IT:A
Description
IC DDR SDRAM 1GBIT 90VFBGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT46H32M32LFCM-6 L IT:A

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (32M x 32)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
90-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
4. AUTO REFRESH and LOAD MODE REGISTER commands can only be issued when all
5. All states and sequences not shown are illegal or reserved.
6. Requires appropriate DM masking.
7. A WRITE command can be applied after the completion of the READ burst; otherwise, a
banks are idle.
BURST TERMINATE must be used to end the READ burst prior to asserting a WRITE com-
mand.
From
Command
READ with
Auto Precharge
To Command
READ or READ with auto precharge
WRITE or WRITE with auto precharge
PRECHARGE
ACTIVE
42
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(with Concurrent Auto
©2007 Micron Technology, Inc. All rights reserved.
Minimum Delay
[CL + (BL/2)]
Precharge)
(BL/2) ×
1
1
Truth Tables
t
t
CK
CK
t
CK
t
CK

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