MT46H64M16LFCK-5 IT:A TR Micron Technology Inc, MT46H64M16LFCK-5 IT:A TR Datasheet - Page 78
![IC DDR SDRAM 1GBIT 60VFBGA](/photos/7/23/72339/60vfbga-package_sml.jpg)
MT46H64M16LFCK-5 IT:A TR
Manufacturer Part Number
MT46H64M16LFCK-5 IT:A TR
Description
IC DDR SDRAM 1GBIT 60VFBGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT46H64M16LFCK-5A_TR.pdf
(95 pages)
Specifications of MT46H64M16LFCK-5 IT:A TR
Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
1G (64M x 16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
-40°C ~ 85°C
Package / Case
60-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Figure 42: WRITE-to-PRECHARGE – Interrupting
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. K 07/09 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
CK
1
5
6
5
6
5
6
WRITE
Bank a,
Col b
T0
Notes:
2
t
t
t
DQSS
DQSS
DQSS
1. An interrupted burst of 8 is shown; two data elements are written.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. PRE = PRECHARGE.
4.
5. DQS is required at T4 and T4n to register DM.
6. D
D
IN
t
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
T1
D
IN
IN
b = data-in for column b.
D
D
IN
IN
T1n
D
IN
D
IN
NOP
T2
T2n
78
t
WR
NOP
T3
4
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3n
(a or all)
PRE
T4
Bank
3
Don’t Care
T4n
T5
NOP
©2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
Transitioning Data
T6
NOP
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