MT46V256M4P-6T:A TR Micron Technology Inc, MT46V256M4P-6T:A TR Datasheet - Page 23
![IC DDR SDRAM 1GBIT 6NS 66TSOP](/photos/7/22/72288/mfg557-66-tsop_sml.jpg)
MT46V256M4P-6T:A TR
Manufacturer Part Number
MT46V256M4P-6T:A TR
Description
IC DDR SDRAM 1GBIT 6NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V256M4P-6T:A TR
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (256M x 4)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Table 16:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
AC Characteristics
Parameter
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ
command
Exit SELF REFRESH-to-READ command
Data valid output window
Electrical Characteristics and Recommended AC Operating Conditions (-6T) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 26;
0°C ≤ T
A
≤ +70°C; V
DD
Q = +2.5V ±0.2V, V
1Gb
DD
= +2.5V ±0.2V
23
Symbol
t
t
t
t
WPST
XSNR
XSRD
t
WTR
n/a
WR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
Min
126
200
1Gb: x4, x8, x16 DDR SDRAM
0.4
15
t
1
-6T (TSOP)
QH -
t
DQSQ
Max
0.6
–
–
–
–
©2003 Micron Technology, Inc. All rights reserved.
Units
t
t
t
CK
ns
CK
ns
CK
ns
Notes
20
26
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