MT46V256M4TG-75:A Micron Technology Inc, MT46V256M4TG-75:A Datasheet - Page 17
MT46V256M4TG-75:A
Manufacturer Part Number
MT46V256M4TG-75:A
Description
IC DDR SDRAM 1GBIT 7.5NS 66TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT46V256M4P-6TA_TR.pdf
(82 pages)
Specifications of MT46V256M4TG-75:A
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (256M x 4)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Figure 8:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Transmitter
Input Voltage Waveform
Notes:
1. V
2. V
3. Numbers in diagram reflect nominal values utilizing circuit below for all devices other than
-5B.
OH
OL
(MAX) with test load is 0.373V.
(MIN) with test load is 1.927V.
25Ω
V
V
V
VssQ
OL
DD
OH
1.560V
1.400V
1.300V
1.275V
1.250V
1.225V
1.200V
1.100V
0.940V
V
IN
V
Q (2.3V MIN)
System noise margin (power/ground,
crosstalk, signal integrity attenuation)
(MAX) (0.83V
(MIN) (1.670V
(
AC
TT
between
and
) - provides margin
25Ω
V
termination)
IL
(
AC
V
)
2
OL
1
for SSTL_2
for SSTL_2 termination)
(MAX)
Reference
point
17
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
1Gb: x4, x8, x16 DDR SDRAM
Receiver
©2003 Micron Technology, Inc. All rights reserved.
V
V
V
V
V
V
V
V
IH
IH
REF
REF
REF
REF
IL
IL
(
(
(
(
DC
AC
AC
DC
+ AC noise
+ DC error
- DC error
- AC noise
)
)
)
)
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