MT46V128M8P-75:A Micron Technology Inc, MT46V128M8P-75:A Datasheet - Page 39

• Manufacturer Part Number: MT46V128M8P-75:A
• Description: IC DDR SDRAM 1GBIT 7.5NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V128M8P-75:A

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 7.5ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 128Mx8
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 210mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ACTIVE (ACT)
Figure 15:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Activating a Specific Row in a Specific Bank
The ACTIVE command is used to open (or activate) a row in a particular bank for a
subsequent access, like a read or a write, as shown in Figure 15. The value on the BA0,
BA1 inputs selects the bank, and the address provided on inputs A0–An selects the row.
BA0, BA1
Address
RAS#
CAS#
WE#
CK#
CKE
CS#
CK
HIGH
Bank
Row
Don’t Care
39
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x4, x8, x16 DDR SDRAM
©2003 Micron Technology, Inc. All rights reserved.
Commands