M25P20-VMN6TPB NUMONYX, M25P20-VMN6TPB Datasheet - Page 18

• Manufacturer Part Number: M25P20-VMN6TPB
• Description: IC FLASH 2MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P20-VMN6TPB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 2M (256K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Package: 8SO N
• Cell Type: NOR
• Density: 2 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 4
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P20-VMN6TPBTR

6.2
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Write Disable (WRDI)
The Write Disable (WRDI) instruction
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
Figure 8.
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Write Disable (WRDI) Instruction Sequence
S
C
D
Q
(Figure
High Impedance
0
1
2
8) resets the Write Enable Latch (WEL) bit.
Instruction
3
4
5
6
7
AI03750D