M25P16-VME6TG NUMONYX, M25P16-VME6TG Datasheet - Page 56
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M25P16-VME6TG
Manufacturer Part Number
M25P16-VME6TG
Description
IC FLASH 16MBIT 75MHZ 8VDFPN
Manufacturer
NUMONYX
Series
Forté™r
Specifications of M25P16-VME6TG
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Cell Type
NOR
Density
16Mb
Access Time (max)
15ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VDFPN EP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
2M
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P16-VME6TG
M25P16-VME6TGTR
M25P16-VME6TGTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P16-VME6TG
Manufacturer:
NUMONYX
Quantity:
8 000
56/56
Table 24.
10-Dec-2007
09-Jan-2007
15-Jun-2007
10-Oct-2006
31-Oct-2007
20-Jun 2008
5-Dec-2008
Date
Document revision history (continued)
Revision
10
12
13
14
15
11
9
Applied Numonyx branding.
Page Program, Sector Erase and Bulk Erase updated in Features.
V
Table 15: AC characteristics (T9HX technology)
VFQFPN8 package specifications updated (see
to
Small text changes. Hardware Write protection added to Features.
VCC supply voltage
Bus master and memory devices on the SPI bus
removed and replaced by an explanatory paragraph. Write In Progress bit
behavior specified at Power-up (see
down). T
temperature range added.
Table 11: Data retention and endurance
(25 MHz operation)
SO8W and VFQFPN8 package specifications updated (see
Package
Eliminated the reference to the Deep Power-down mode and updated the
Read Identification instruction in
Inserted UID and CFI content columns in
(RDID) data-out
Modified Data bytes for RDID instruction in
Modified Q signal in
sequence and data-out
Modified Test condition and maximum values for I
characteristics.
Eliminated Table 15: AC characteristics (Grade 6).
Modified the maximum value for f
technology).
Removed ‘low voltage’ from the title. Changed the typical time for Bulk
Erase on page 1.
Section 6.3: Read Identification (RDID)
Added note 2 and 3 to
Modified maximum value for t
technology).
Added a reference to customer’s ability to request dedicated part number
in
Moved specifications in “max” column to “min” column and changed the
“min” for grade 3 to 10,000 in
page
Deleted “grade 6” reference in
technology) on page
Deleted “grade 3” reference and “preliminary note” in
characteristics (25 MHz operation) on page
Revised
Added the PDIP8 (BA), 300 mils width package information.
IO
Section 6.3: Read Identification (RDID) on page
Table
max modified in
39.
18.
LEAD
Section 12: Part numbering on page
mechanical).
Note: on page 54
added to
sequence.
added.
and
Table 9: Absolute maximum
Figure 10: Read Identification (RDID) instruction
41.
Table 9: Absolute maximum
Table 9: Absolute maximum
sequence.
VSS ground
CLQV
Table 11: Data retention and endurance on
modified.
Table 15: AC characteristics (T9HX
Changes
Section 6.3: Read Identification
C
in
in
Section 7: Power-up and power-
signal descriptions added.
Table 15: AC characteristics (T9HX
Table 15: AC characteristics (T9HX
updated.
and
Table 5: Read Identification
Table 4: Instruction
43.
Table 16: AC characteristics
54.
added.
Table
ratings.
modified, note 2
CC3
22.
ratings.
ratings. Grade 3
Table 16: AC
in
17).
Table 14: DC
Note 1
Section 11:
set.
Figure 4:
(RDID).
added