M25P16-VME6TG NUMONYX, M25P16-VME6TG Datasheet - Page 39

• Manufacturer Part Number: M25P16-VME6TG
• Description: IC FLASH 16MBIT 75MHZ 8VDFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P16-VME6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VDFPN
• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 15ns
• Interface Type: Serial (SPI)
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 2M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P16-VME6TG; M25P16-VME6TGTR

Table 15.
Symbol Alt.
t
t
t
t
t
t
t
t
t
HHQX
WHSL
SHWL
CLCH
CHCL
SHQZ
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
CLQV
CLQX
HLCH
CHHL
CL
SHSL
DP
t
f
f
W
C
R
(1)
(2)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(5)
(5)
t
t
t
t
t
t
t
t
CLH
CSS
DSU
CSH
t
t
CLL
DIS
f
DH
HO
t
HZ
LZ
C
V
AC characteristics (
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN,
WRDI, RDID, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Rise time
Clock Fall time
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid under 30 pF/10 pF
Output Hold time
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD Setup time (relative to C)
HOLD Hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect Setup time
Write Protect Hold time
S High to Deep Power-down mode
S High to Standby mode without Read
Electronic Signature
S High to Standby mode with Read Electronic
Signature
Write Status Register cycle time
Applies only to products made with 110 nm technology
Test conditions specified in
(4)
(4)
(peak to peak)
Parameter
(peak to peak)
110 nm technology
Table 10
)
—
—
—
—
—
—
and
Min
100 —
100 —
DC —
DC —
0.1 —
0.1 —
20
6
6
5
5
2
5
5
5
0
5
5
5
5
Table 12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
1.3
(1)
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Max
8/6
75
33
30
30
15
8
8
8
3
MHz
MHz
39/59
Unit
V/ns
V/ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs