M25P40-VMN3TPB NUMONYX, M25P40-VMN3TPB Datasheet - Page 20

• Manufacturer Part Number: M25P40-VMN3TPB
• Description: IC SRL FLASH 4MBIT 3V 75MHZ S08N
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P40-VMN3TPB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-SOIC (3.9mm Width)
• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 15ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Temp Range: -40C to 125C
• Package Type: SO N
• Program/erase Volt (typ): 2.3 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Automotive
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Write Disable (WRDI)
The Write Disable (WRDI) instruction
The Write Disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The Write Enable Latch (WEL) bit is reset under the following conditions:
Figure 8.
Power-up
Write Disable (WRDI) instruction completion
Write Status Register (WRSR) instruction completion
Page Program (PP) instruction completion
Sector Erase (SE) instruction completion
Bulk Erase (BE) instruction completion
Write Disable (WRDI) instruction sequence
S
C
D
Q
(Figure
High Impedance
0
1
2
8) resets the Write Enable Latch (WEL) bit.
Instruction
3
4
5
6
7
AI03750D