M25P16-VMN3TPB NUMONYX, M25P16-VMN3TPB Datasheet - Page 40

• Manufacturer Part Number: M25P16-VMN3TPB
• Description: IC SRL FLSH 16MBIT 3V 75MHZ S08N
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P16-VMN3TPB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Table 15.
1. Typical values given for T
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set at ‘1’.
6. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
7. int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4, int(15.3) =16.
Symbol Alt.
t
PP
t
t
obtained with one sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤
256).
SE
BE
CH
(6)
+ t
CL
must be greater than or equal to 1/ f
AC characteristics (
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes, where n = 1
to 4)
Page Program cycle time (n bytes, where n = 5
to 256)
Sector Erase cycle time
Bulk Erase cycle time
Applies only to products made with 110 nm technology
Test conditions specified in
A
= 25 °C.
Parameter
110 nm technology
C
.
Table 10
) (continued)
—
—
—
—
—
and
Min
Table 12
int(n/8) × 0.02
Typ
0.64
0.01
0.6
13
(1)
(7)
Max
40
5
3
Unit
ms
s
s