IDT71024S15TYG IDT, Integrated Device Technology Inc, IDT71024S15TYG Datasheet - Page 2

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IDT71024S15TYG

Manufacturer Part Number
IDT71024S15TYG
Description
IC SRAM 1MBIT 15NS 32SOJ
Manufacturer
IDT, Integrated Device Technology Inc
Series
-r
Datasheet

Specifications of IDT71024S15TYG

Format - Memory
RAM
Memory Type
SRAM
Memory Size
1M (128K x 8)
Speed
15ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-SOJ
Density
1Mb
Access Time (max)
15ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
17b
Package Type
SOJ
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
155mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Other names
71024S15TYG

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT71024S15TYG
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT71024S15TYGI
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT71024S15TYGI8
Manufacturer:
IDT
Quantity:
300
Pin Configuration
Truth Table
NOTES:
1. H = V
2. V
3. Other inputs ≥V
Recommended Operating
Temperature and Supply Voltage
IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit)
WE
Commercial
X
X
X
X
H
H
L
Industrial
LC
Grade
= 0.2V, V
IH
V
CS
, L = V
HC
H
X
X
L
L
L
Inputs
(2)
1
IL
HC
, X = Don't care.
V
HC
CS
= V
LC
X
X
H
H
H
L
or ≤V
(2)
2
CC
–40°C to +85°C
0°C to +70°C
Temperature
–0.2V.
(1,3)
LC.
OE
X
X
X
X
X
H
L
Top View
DATA
SOJ
DATA
High-Z
High-Z
High-Z
High-Z
High-Z
I/O
OUT
IN
Deselected – Standby (I
Deselected – Standby (I
Deselected – Standby (I
Deselected – Standby (I
Outputs Disabled
Read Data
Write Data
GND
0V
0V
Function
5.0V ± 0.5V
5.0V ± 0.5V
V
CC
2964 tbl 01
2964 tbl 05
SB
SB1
SB
SB1
)
)
)
)
6.42
2
Absolute Maximum Ratings
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
2. V
Capacitance
(T
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
Recommended DC Operating
Conditions
NOTE:
1. V
P
I
V
T
T
OUT
BIAS
STG
Symbol
Symbol
T
TERM
A
Symbol
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
GND
V
C
V
V
C
TERM
= +25°C, f = 1.0MHz, SOJ package)
IL
CC
I/O
IH
IL
IN
(min.) = –1.5V for pulse width less than 10ns, once per cycle.
(2)
must not exceed V
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input Capacitance
I/O Capacitance
Storage Temperature
Power Dissipation
DC Output Current
Terminal Voltage with Respect to GND
Temperature Under Bias
Commercial and Industrial Temperature Ranges
Parameter
Parameter
CC
+ 0.5V.
Rating
(1)
–0.5
V
Min.
Conditions
4.5
2.2
V
OUT
0
IN
(1)
= 3dV
= 3dV
Typ.
5.0
____
____
0
–0.5 to +7.0
–55 to +125
–55 to +125
Value
1.25
50
V
Max.
(1)
CC
Max.
7
8
5.5
0.8
0
+0.5
2964 tbl 03
2964 tbl 02
2964 tbl 04
Unit
Unit
pF
pF
mA
Unit
o
o
W
V
C
C
V
V
V
V

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