M27C256B-70XF1 STMicroelectronics, M27C256B-70XF1 Datasheet - Page 16

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M27C256B-70XF1

Manufacturer Part Number
M27C256B-70XF1
Description
IC EPROM 256KBIT 70NS 28CDIP
Manufacturer
STMicroelectronics
Datasheet

Specifications of M27C256B-70XF1

Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
256K (32K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.75 V ~ 5.25 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Density
256K
Organization
32K×8
Package Type
FDIP28W
Temperature, Operating
0 to +70 °C
Time, Access
70 ns
Time, Fall
≤20 ns
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, Low
0.8 V (Read)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Supply
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0
DC and AC parameters
16/24
Figure 7.
Table 9.
1. T
2. V
3. Speed obtained with High Speed AC measurement conditions.
4. Sampled only, not 100% tested.
Symbol
t
t
)
EHQZ
GHQZ
t
t
t
t
AVQV
GLQV
AXQX
ELQV
Q0-Q7
A0-A14
E
G
A
CC
= 0 to 70°C, –40 to 85°C, –40 to 105°C or –40 to 125°C; V
(4)
(4)
must be applied simultaneously with or before V
t
ACC
t
t
t
Alt
t
t
OH
CE
OE
DF
DF
Read mode AC waveforms
Read mode AC characteristics
Address Valid to
Output Valid
Chip Enable Low
to Output Valid
Output Enable Low
to Output Valid
Chip Enable High
to Output Hi-Z
Output Enable
High to Output Hi-Z
Address Transition
to Output
Transition
Parameter
tAVQV
tELQV
tGLQV
VALID
Condition
E = V
E = V
G = V
G = V
G = V
G = V
E = V
E = V
Test
IL
IL
IL
IL
IL
IL
IL
IL
,
,
Min Max Min Max Min Max Min Max
(1) (2)
PP
0
0
0
-45
and removed simultaneously or after V
(3)
45
45
25
25
25
CC
= 5V ± 5% or 5V ± 10%; V
0
0
0
-60
tAXQX
M27C256B
60
60
30
30
30
0
0
0
tGHQZ
tEHQZ
VALID
-70
70
70
35
30
30
PP
0
0
0
= V
PP
-80
M27C256B
.
CC
80
80
40
30
30
AI00758B
Hi-Z
Unit
ns
ns
ns
ns
ns
ns

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