CY62148ELL-55SXIT Cypress Semiconductor Corp, CY62148ELL-55SXIT Datasheet - Page 6

IC SRAM 4MBIT 55NS 32SOIC

CY62148ELL-55SXIT

Manufacturer Part Number
CY62148ELL-55SXIT
Description
IC SRAM 4MBIT 55NS 32SOIC
Manufacturer
Cypress Semiconductor Corp

Specifications of CY62148ELL-55SXIT

Memory Size
4M (512K x 8)
Format - Memory
RAM
Memory Type
SRAM
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-SOIC (11.30mm Width)
Memory Configuration
512K X 8
Access Time
55ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
SOIC
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Density
4Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
19b
Package Type
SOIC
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
20mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62148ELL-55SXIT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Data Retention Characteristics
Over the operating range
Document #: 38-05442 Rev. *I
V
I
t
t
Notes
CCDR
CDR
R
Parameter
12. Typical values are included for reference and are not guaranteed or tested. Typical values are measured at V
13. Chip enable (CE) must be HIGH at CMOS level to meet the I
14. Full device operation requires linear V
DR
[14]
[13]
V
CE
CC
V
Data retention current
Chip deselect to data retention time
Operation recovery time
CC
for data retention
Description
CC
ramp from V
V
t
CC(min)
CDR
Figure 3. Data Retention Waveform
DR
to V
SB2
CC
V
V
(min) > 100 µs or stable at V
CC
IN
/ I
CCDR
> V
= V
DATA RETENTION MODE
CC
DR
spec. Other inputs can be left floating.
, CE > V
– 0.2 V or V
V
DR
CC
> 2.0 V
Conditions
– 0.2 V,
IN
CC
< 0.2 V
(min) > 100 µs.
Automotive-A
CC
Industrial /
TSOP II
= V
SOIC
V
CC(typ)
CC(min)
t
R
, T
A
CY62148E MoBL
= 25 °C.
Min
45
55
2
0
Typ
1
[12]
Page 6 of 16
Max Unit
7
µA
ns
ns
ns
V
®
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