CY62148ELL-55SXIT Cypress Semiconductor Corp, CY62148ELL-55SXIT Datasheet - Page 4

• Manufacturer Part Number: CY62148ELL-55SXIT
• Description: IC SRAM 4MBIT 55NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62148ELL-55SXIT

• Memory Size: 4M (512K x 8)
• Format - Memory: RAM
• Memory Type: SRAM
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-SOIC (11.30mm Width)
• Memory Configuration: 512K X 8
• Access Time: 55ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: SOIC
• No. Of Pins: 32
• Operating Temperature Range: -40°C To +85°C
• Rohs Compliant: Yes
• Density: 4Mb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 19b
• Package Type: SOIC
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 20mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature with
power applied .......................................... –55 °C to + 125 °C
Supply voltage to
ground potential.................. –0.5 V to 6.0 V (V
DC voltage applied to outputs
in high Z state
DC input voltage
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage........................................... > 2001 V
(per MIL-STD-883, Method 3015)
Latch-up current ......................................................>200 mA
Electrical Characteristics
Over the operating range
Document #: 38-05442 Rev. *H
V
V
V
V
I
I
I
I
Notes
IX
OZ
CC
SB2
3. V
4. V
5. Full device AC operation assumes a minimum of 100 µs ramp time from 0 to V
6. SOIC package is available only in 55 ns speed bin.
7. Typical values are included for reference and are not guaranteed or tested. Typical values are measured at V
8. Under DC conditions the device meets a V
9. Chip enable (CE) must be HIGH at CMOS level to meet the I
Parameter
OH
OL
IH
IL
This is applicable to SOIC package only. Refer to
[9]
IL(min)
IH(max)
= –2.0 V for pulse durations less than 20 ns for I < 30 mA.
= V
CC
Output HIGH voltage I
Output LOW voltage I
Input HIGH voltage
Input LOW voltage
Input leakage current GND < V
Output leakage
current
V
current
Automatic CE
power-down current
— CMOS inputs
[3, 4]
+ 0.75 V for pulse durations less than 20 ns.
CC
[3, 4]
.............. –0.5 V to 6.0 V (V
Description
operating supply
.......... –0.5 V to 6.0 V (V
V
V
GND < V
f = f
f = 1 MHz
CE > V
V
f = 0, V
IL
OH
OL
CC
CC
IN
of 0.8 V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.6 V.
= 2.1 mA
max
= –1 mA
> V
= 4.5 V to 5.5 V For TSOPII
= 4.5 V to 5.5 V
AN13470
CC
CC
CC
= 1/t
I
O
CCmax
CCmax
CCmax
< V
Test Conditions
< V
– 0.2 V
= V
– 0.2 V or V
RC
CC
CC
for details.
CC(max)
SB2
+ 0.5 V)
+ 0.5 V)
+ 0.5 V)
, output disabled
/ I
CCDR
package
For SOIC
package
V
I
CMOS levels
OUT
CC
IN
spec. Other inputs can be left floating.
< 0.2 V,
= V
= 0 mA
CC
CC(max)
(min) and 200 µs wait time after V
Operating Range
CY62148E
Device
–0.5
Min
2.4
2.2
–1
–1
–
–
–
–
Typ
Automotive-A
45 ns
15
–
–
–
–
–
–
–
2
1
Industrial/
[7]
Range
CC
V
CC
Max
= V
0.4
0.8
2.5
+1
+1
20
–
–
7
+ 0.5
CC
CC(typ)
stabilization.
–40 °C to +85 °C 4.5 V to 5.5 V
, T
–0.5
Min
Temperature
2.4
2.2
A
–1
–1
CY62148E MoBL
–
–
–
–
–
= 25 °C.
Ambient
Typ
55 ns
15
–
–
–
–
–
–
–
2
1
[7]
[6]
V
CC
0.6
Max
0.4
2.5
+1
+1
20
–
–
7
+ 0.5
Page 4 of 14
[8]
V
CC
[5]
Unit
mA
µA
µA
µA
V
V
V
V
®
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