M27C2001-10F1 STMicroelectronics, M27C2001-10F1 Datasheet - Page 13

IC EPROM 2MBIT 100NS 32CDIP

M27C2001-10F1

Manufacturer Part Number
M27C2001-10F1
Description
IC EPROM 2MBIT 100NS 32CDIP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M27C2001-10F1

Format - Memory
EPROMs
Memory Type
UV EPROM
Memory Size
2M (256K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-CDIP (0.600", 15.24mm) Window
Capacitance, Input
6 pF
Capacitance, Output
12 pF
Current, Input, Leakage
±10 μA (Read)
Current, Operating
30 mA (Read)
Current, Output, Leakage
±10 μA (Read)
Current, Supply
30 mA
Density
2M
Organization
256K×8
Package Type
FDIP32W
Temperature, Operating
0 to +70 °C
Temperature, Operating, Maximum
70 °C
Temperature, Operating, Minimum
0 °C
Time, Access
100 ns
Time, Fall
≤20 ns
Time, Programmable
100 μs
Time, Rise
≤20 ns
Voltage, Input, High
6 V (Read)
Voltage, Input, High Level
2 V (Min.)
Voltage, Input, Low
0.8 V (Read)
Voltage, Input, Low Level
-0.3 V (Min.)
Voltage, Output, High
4.3 V (Read)
Voltage, Output, Low
0.4 V (Read)
Voltage, Programmable
11.5 V (Min.)
Voltage, Supply
5 V
Memory Configuration
256K X 8
Access Time
55ns
Supply Voltage Range
4.5V To 5V
Memory Case Style
FDIPW
No. Of Pins
32
Rohs Compliant
Yes
Operating Temperature Range
0°C To +70°C
Ic Interface Type
Parallel
Operating Temperature Max
70°C
Operating Temperature Min
0°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-1639-5

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M27C2001-10F1
Manufacturer:
ST
Quantity:
2 100
Part Number:
M27C2001-10F1
Manufacturer:
ST
Quantity:
20 000
Part Number:
M27C2001-10F1+
Manufacturer:
ST
0
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Manufacturer:
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Quantity:
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Company:
Part Number:
M27C2001-10F1L
Quantity:
120
M27C1001
4
DC and AC characteristics
T
Table 5.
1. V
2. Maximum DC voltage on Output is V
T
Table 6.
1. V
Symbol
A
A
V
Symbol
I
I
V
V
= 0 to 70°C, –40 to 85°C or –40 to 125°C; V
= 25 °C; V
I
IH
I
CC1
CC2
I
V
I
LO
CC
PP
V
OH
V
OL
LI
V
V
I
I
V
CC
CC
IL
I
CC
PP
OH
LI
OL
(2)
IH
ID
IL
must be applied simultaneously with or before V
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS E > V
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
Output High Voltage CMOS
Input Leakage Current
Supply Current
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
A9 Voltage
Read Mode DC Characteristics
Programming Mode DC Characteristics
CC
= 6.25V ± 0.25V; V
Parameter
Parameter
CC
+0.5V.
PP
= 12.75V ± 0.25V
0V
0V
E = V
I
E = V
V
I
I
I
V
E = V
I
I
OUT
OL
OH
OH
OL
OH
PP
IL
Test Condition
Test Condition
= 2.1mA
= 2.1mA
= –400µA
= –100µA
= –400µA
= V
= 0mA, f = 5MHz
V
V
IL
IH
CC
V
IL
PP
PP
OUT
IN
(1)
, G = V
IN
CC
CC
and removed simultaneously or after V
and removed simultaneously or after V
– 0.2V
= 5V ± 5% or 5V ± 10%; V
V
V
CC
IH
V
IL
CC
,
(1)
V
Min.
–0.3
11.5
CC
DC and AC characteristics
2.4
2
Min.
–0.3
2.4
– 0.7V
2
V
CC
Max.
12.5
±10
0.8
0.4
50
50
V
+ 0.5
Max.
CC
PP
±10
±10
100
0.8
0.4
30
10
1
PP
PP
+ 1
= V
.
.
CC
Unit
mA
mA
µA
V
V
V
V
V
Unit
mA
mA
13/24
µA
µA
µA
µA
V
V
V
V
V

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