CY14B101LA-ZS25XI Cypress Semiconductor Corp, CY14B101LA-ZS25XI Datasheet - Page 15

IC NVSRAM 1MBIT 25NS 44TSOPII

CY14B101LA-ZS25XI

Manufacturer Part Number
CY14B101LA-ZS25XI
Description
IC NVSRAM 1MBIT 25NS 44TSOPII
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY14B101LA-ZS25XI

Memory Size
1M (128K x 8)
Package / Case
*
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Speed
25ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Data Bus Width
16 bit
Organization
128 K x 8
Access Time
25 ns
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Operating Current
70 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Software Controlled STORE/RECALL Cycle
Switching Waveforms
Document #: 001-42879 Rev. *K
Notes
t
t
t
t
t
RC
SA
CW
HA
RECALL
37. The software sequence is clocked with CE controlled or OE controlled reads.
38. The six consecutive addresses must be read in the order listed in
39. DQ output data at the sixth read may be invalid because the output is disabled at t
Parameter
HSB (STORE only)
[37, 38]
DQ (DATA)
DQ (DATA)
Address
Address
STORE/RECALL initiation cycle time
Address setup time
Clock pulse width
Address hold time
RECALL duration
RWI
OE
CE
CE
OE
t
Figure 12. CE and OE Controlled Software STORE/RECALL Cycle
SA
t
SA
t
LZCE
t
SA
t
Description
LZCE
t
Address #1
SA
Address #1
t
t
RC
CW
Figure 13. AutoStore Enable/Disable Cycle
t
RC
t
CW
t
HZCE
t
t
Table 2 on page
HA
HA
t
HZCE
t
t
HA
HA
Min
20
15
DELAY
6. WE must be HIGH during all six consecutive cycles.
t
0
0
DELAY
20 ns
Address #6
time.
Note
Max
200
t
RC
t
CW
39
t
HA
Address #6
High Impedance
Note
Min
t
25
20
t
STORE
RC
0
0
t
CW
39
25 ns
t
t
HA
HA
/t
RECALL
t
DELAY
t
Max
200
SS
[38]
t
HA
Min
45
30
0
0
CY14B101NA
CY14B101LA
45 ns
t
HHHD
Max
200
t
LZHSB
Page 15 of 26
Unit
ns
ns
ns
ns
µs
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