IDT70261L20PF IDT, Integrated Device Technology Inc, IDT70261L20PF Datasheet

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IDT70261L20PF

Manufacturer Part Number
IDT70261L20PF
Description
IC SRAM 256KBIT 20NS 100TQFP
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT70261L20PF

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Asynchronous
Memory Size
256K (16K x 16)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
70261L20PF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT70261L20PF
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70261L20PF
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT70261L20PF8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70261L20PFGI
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT70261L20PFI
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Part Number:
IDT70261L20PFI
Manufacturer:
IDT
Quantity:
20 000
Part Number:
IDT70261L20PFI8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Features
Functional Block Diagram
©2009 Integrated Device Technology, Inc.
NOTES:
1. (MASTER): BUSY is output; (SLAVE): BUSY is input.
2. BUSY and INT outputs are non-tri-stated push-pull.
True Dual-Ported memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 15/20/25/35/55ns (max.)
– Industrial 20/25ns (max.)
Low-power operation
– IDT70261S
– IDT70261L
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
Active: 750mW (typ.)
Standby: 5mW (typ.)
Active: 750mW (typ.)
Standby: 1mW (typ.)
I/O
I/O
BUSY
8L
0L
INT
-I/O
SEM
R/
-I/O
UB
A
OE
CE
LB
L
A
W
(1,2)
13L
L
15L
0L
(2)
L
7L
L
L
L
L
L
Decoder
Address
R/W
OE
CE
L
L
L
14
Control
HIGH-SPEED
16K x 16 DUAL-PORT
STATIC RAM WITH INTERRUPT
I/O
ARBITRATION
SEMAPHORE
INTERRUPT
MEMORY
ARRAY
LOGIC
M/S
1
IDT70261 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = H for BUSY output flag on Master,
M/S = L for BUSY input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 5V (±10%) power supply
Available in 100-pin Thin Quad Flatpack
Industrial temperature range (-40
for selected speeds
Control
I/O
14
Decoder
Address
CE
OE
R/W
R
R
R
O
C to +85
JANUARY 2009
IDT70261S/L
3039 drw 01
INT
SEM
O
BUSY
R/
UB
CE
I/O
A
A
LB
OE
I/O
C) is available
13R
0R
W
R
R
R
8R
R
0R
(2)
R
R
R
-I/O
-I/O
R
(1,2)
15R
7R
DSC 3039/10

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IDT70261L20PF Summary of contents

Page 1

... Features True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns (max.) – Industrial 20/25ns (max.) Low-power operation – IDT70261S Active: 750mW (typ.) Standby: 5mW (typ.) – IDT70261L Active: 750mW (typ.) Standby: 1mW (typ.) ...

Page 2

... This text does not indicate orientation of the actual part-marking. address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CE permits the on-chip circuitry of each port to enter a very low standby power mode. ...

Page 3

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Maximum Operating Temperature and Supply Voltage (1,2) Ambient Grade Temperature Commercial + Industrial - + NOTES: 1. This is ...

Page 4

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Absolute Maximum Ratings Symbol Rating (2) V Terminal Voltage TERM with Respect to GND T Temperature BIAS Under Bias T Storage STG Temperature I DC Output OUT Current NOTES: 1. ...

Page 5

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter Dynamic Operating Current CC SEM = V (Both Ports Active ...

Page 6

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol READ CYCLE t Read Cycle Time RC t Address Access Time AA (3) t Chip Enable Access Time ...

Page 7

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Waveform of Read Cycles ADDR CE OE UB, LB R/W DATA OUT BUSY OUT NOTES: 1. Timing depends on which signal is asserted last, OE, CE, LB, or UB. 2. ...

Page 8

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Symbol Parameter WRITE CYCLE t Write Cycle Time WC (3) t Chip Enable to End-of-Write EW t Address Valid to ...

Page 9

... ( and a R for memory array writing cycle the end of write cycle. IH transition, the outputs remain in the High-impedance state. IL during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the IH and SEM = 6.42 Industrial and Commercial Temperature Ranges ...

Page 10

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Timing Waveform of Semaphore Read after Write Timing, Either Side VALID ADDRESS SEM I R/W OE NOTES ...

Page 11

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol BUSY TIMING (M/S BUSY Access Time from Address Match t BAA BUSY Disable Time from Address ...

Page 12

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Timing Waveform of Write with Port-to-Port Read and BUSY (M ADDR "A" R/W "A" DATA IN "A" (1) t APS ADDR "B" BUSY "B" DATA OUT "B" NOTES: ...

Page 13

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Waveform of BUSY Arbitration Controlled by CE Timing (M ADDR "A" and "B" CE "A" (2) t APS CE "B" BUSY "B" Waveform of BUSY Arbitration Cycle Controlled ...

Page 14

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Waveform of Interrupt Timing ADDR "A" ( "A" R/W "A" INT "B" ADDR "B" ( "B" OE "B" INT "B" NOTES: 1. All timing ...

Page 15

... The message (16 bits) at 3FFE or 3FFF is user-defined since addressable SRAM location. If the interrupt function is not used, address locations 3FFE and 3FFF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table III for the interrupt operation ...

Page 16

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Busy Logic Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two ...

Page 17

... Semaphore 0 could be used to indicate the side which would control the lower section of memory, and Semaphore 1 could be defined as the indicator for the upper section of memory. To take a resource, in this example the lower 8K of Dual-Port RAM, the processor on the left port could write and then read a zero in to Semaphore 0 ...

Page 18

... Semaphores are a useful form of arbitration in systems like disk interfaces where the CPU must be locked out of a section of memory during Industrial and Commercial Temperature Ranges a transfer and the I/O device cannot tolerate any wait states. With the use of semaphores, once the two devices has determined which memory area was “ ...

Page 19

IDT70261S/L High-Speed 16K x 16 Dual-Port Static RAM with Interrupt Ordering Information XXXXX A 999 Device Power Speed Package Type NOTE: 1. Contact your local sales office for Industrial temp range for other speeds, packages and powers. Datasheet Document History ...

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