MR0A08BCYS35 EverSpin Technologies Inc, MR0A08BCYS35 Datasheet - Page 7

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MR0A08BCYS35

Manufacturer Part Number
MR0A08BCYS35
Description
IC MRAM 1MBIT 35NS 44TSOP
Manufacturer
EverSpin Technologies Inc
Datasheet

Specifications of MR0A08BCYS35

Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Memory Size
1M (128K x 8)
Speed
35ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
819-1000
Everspin Technologies © 2009
3. TIMING SPECIFICATIONS
1
Parameter
Address input capacitance
Control input capacitance
Input/Output capacitance
Parameter
Logic input timing measurement reference level
Logic output timing measurement reference level
Logic input pulse levels
Input rise/fall time
Output load for low and high impedance parameters
Output load for all other timing parameters
f = 1.0 MHz, dV = 3.0 V, T
A
= 25 °C, periodically sampled rather than 100% tested.
Output
Figure 3.1 Output Load Test Low and High
Output
Table 3.2 AC Measurement Conditions
Figure 3.2 Output Load Test All Others
435
Table 3.1 Capacitance
Z
D
= 50
7
3.3 V
Symbol
C
C
C
In
In
I/O
Document Number: MR0A08B Rev. 2, 6/2009
590
1
V
5 pF
L
= 1.5 V
R
L
Typical
-
-
-
= 50
Value
1.5
1.5
0 or 3.0
2
See Figure 3.1
See Figure 3.2
Max
6
6
8
MR0A08B
Unit
V
V
V
ns
Unit
pF
pF
pF

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