CAT24C64WI-GT3 ON Semiconductor, CAT24C64WI-GT3 Datasheet - Page 3
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CAT24C64WI-GT3
Manufacturer Part Number
CAT24C64WI-GT3
Description
IC EEPROM 64KBIT 400KHZ 8SOIC
Manufacturer
ON Semiconductor
Datasheet
1.CAT24C64YI-GT3.pdf
(15 pages)
Specifications of CAT24C64WI-GT3
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Density
64Kb
Interface Type
Serial (I2C)
Organization
8Kx8
Access Time (max)
900ns
Frequency (max)
400KHz
Write Protection
Yes
Data Retention
100Year
Operating Supply Voltage (typ)
1.8/2.5/3.3/5V
Operating Temp Range
-40C to 85C
Supply Current
2mA
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Maximum Clock Frequency
0.4 MHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 3.3 V, 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
24C64WI-GT3
CAT24C64WI-GT3TR
CAT24C64WI-GT3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CAT24C64WI-GT3
Manufacturer:
CAT
Quantity:
2 800
Company:
Part Number:
CAT24C64WI-GT3
Manufacturer:
ON Semiconductor
Quantity:
2 000
Part Number:
CAT24C64WI-GT3
Manufacturer:
CATALYST
Quantity:
20 000
6. Test conditions according to “A.C. Test Conditions” table.
7. Tested initially and after a design or process change that affects this parameter.
8. t
9. Fast−Plus (1 MHz) speed class available for product revision “F”. The die revision “F” is identified by letter “F” or a dedicated marking code
Table 5. A.C. CHARACTERISTICS
(V
Table 6. A.C. TEST CONDITIONS
Input Levels
Input Rise and Fall Times
Input Reference Levels
Output Reference Levels
Output Load
t
PU
CC
on top of the package.
PU
t
t
T
R
F
Symbol
i
(Notes 7, 8)
t
t
t
t
t
= 1.8 V to 5.5 V, T
t
t
HD:STA
HD:DAT
SU:DAT
SU:STO
SU:STA
(Note 7)
(Note 7)
is the delay between the time V
(Note 7)
SU:WP
HD:WP
F
t
t
t
HIGH
t
LOW
t
BUF
t
WR
SCL
DH
AA
Clock Frequency
START Condition Hold Time
Low Period of SCL Clock
High Period of SCL Clock
START Condition Setup Time
Data In Hold Time
Data In Setup Time
SDA and SCL Rise Time
SDA and SCL Fall Time
STOP Condition Setup Time
Bus Free Time Between
STOP and START
SCL Low to Data Out Valid
Data Out Hold Time
Noise Pulse Filtered at SCL
and SDA Inputs
WP Setup Time
WP Hold Time
Write Cycle Time
Power-up to Ready Mode
A
= −40°C to +125°C and V
Parameter
CC
is stable and the device is ready to accept commands.
0.2 x V
≤ 50 ns
0.3 x V
0.5 x V
Current Source: I
CC
CC
CC
, 0.7 x V
CC
to 0.8 x V
= 1.7 V to 5.5 V, T
V
CC
Min
250
100
4.7
4.7
4.7
2.5
http://onsemi.com
OL
4
4
0
4
0
CC
= 1.7 V − 5.5 V
Standard
CC
= 3 mA (V
3
1,000
Max
100
300
100
3.5
5
1
CC
A
= −40°C to +85°C.) (Note 6)
≥ 2.5 V); I
V
CC
Min
100
100
0.6
1.3
0.6
0.6
0.6
1.3
2.5
0
0
OL
= 1.7 V − 5.5 V
= 1 mA (V
Fast
Max
400
300
300
100
0.9
5
1
CC
< 2.5 V); C
T
V
Fast−Plus (Note 9)
A
CC
0.25
0.45
0.40
0.25
0.25
Min
0.5
0.1
50
50
= −405C to +855C
0
0
1
= 2.5 V − 5.5 V
L
= 100 pF
1,000
Max
0.40
100
100
100
5
1
Units
kHz
ms
ms
ms
ms
ms
ms
ms
ns
ns
ns
ms
ms
ms
ns
ns
ms
ms