DS1230W-100 Maxim Integrated Products, DS1230W-100 Datasheet - Page 4

IC NVSRAM 256KBIT 100NS 28DIP

DS1230W-100

Manufacturer Part Number
DS1230W-100
Description
IC NVSRAM 256KBIT 100NS 28DIP
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS1230W-100

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-DIP Module (600 mil), 28-EDIP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS1230W-100
Manufacturer:
DALLAS
Quantity:
20 000
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Lead Temperature (soldering, 10s)
Soldering Temperature (reflow, PowerCap)
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect
reliability.
RECOMMENDED DC OPERATING CONDITIONS
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Power Supply Voltage
Logic 1
Logic 0
PARAMETER
Input Leakage Current
I/O Leakage Current
Output Current @ 2.2V
Output Current @ 0.4V
Standby Current
Standby Current
Operating Current
Write Protection Voltage
Commercial:
Industrial:
EDIP
PowerCap
Note: EDIP is wave or hand soldered only.
CE
CE
=2.2V
=V
CE
CC
≥ V
-0.2V
IH
≤ V
CC
SYMBOL
SYMBOL
I
I
I
V
V
V
V
CCO1
I
I
CCS1
CCS2
I
I
OH
OL
IO
IL
CC
TP
IH
IL
4 of 10
(T
MIN
MIN
-1.0
-1.0
-1.0
3.0
2.2
0.0
2.0
2.8
A
: See Note 10) (V
TYP
TYP
3.3
2.9
50
30
MAX
MAX
+1.0
+1.0
V
250
150
3.6
0.4
3.0
50
CC
(T
CC
A
UNITS
UNITS
: See Note 10)
= 3.3V ±0.3V)
mA
mA
mA
-55°C to +125°C
µA
µA
µA
µA
V
V
V
V
-0.3V to +4.6V
-40°C to +85°C
-40°C to +85°C
0°C to +70°C
NOTES
NOTES
DS1230W
+260°C
+260°C

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