AT27BV512-12TI Atmel, AT27BV512-12TI Datasheet - Page 9
![IC OTP 512KBIT 120NS 28TSOP](/photos/7/21/72191/313-28-tsop_sml.jpg)
AT27BV512-12TI
Manufacturer Part Number
AT27BV512-12TI
Description
IC OTP 512KBIT 120NS 28TSOP
Manufacturer
Atmel
Datasheet
1.AT27BV512-90JC.pdf
(12 pages)
Specifications of AT27BV512-12TI
Format - Memory
EPROMs
Memory Type
OTP EPROM
Memory Size
512K (64K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT27BV51212TI
Rapid Programming Algorithm
A 100 s CE pulse width is used to program. The address
is set to the first location. V
is raised to 13.0V. Each address is first programmed with
one 100 s CE pulse without verification. Then a verifica-
tion / reprogramming loop is executed for each address. In
the event a byte fails to pass verification, up to 10 succes-
sive 100 s pulses are applied with a verification after each
CC
is raised to 6.5V and OE/V
PP
pulse. If the byte fails to verify after 10 pulses have been
applied, the part is considered failed. After the byte verifies
properly, the next address is selected until all have been
checked. OE/V
bytes are read again and compared with the original data to
determine if the device passes or fails.
PP
is then lowered to V
IL
and V
CC
to 5.0V. All
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